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AJT015

Advanced Semiconductor

NPN SILICON RF POWER TRANSISTOR

AJT015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: The ASI AJT015 is Designed for 4x .062 x...


Advanced Semiconductor

AJT015

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Description
AJT015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: The ASI AJT015 is Designed for 4x .062 x 45° 2xB D G H ØE F A .040 x 45° C FEATURES: Input Matching Network Omnigold™ Metalization System M I J K L R N P DIM A B MINIMUM inches / mm MAXIMUM inches / mm .095 / 2.41 .100 / 2.54 .050 / 1.27 .286 / 7.26 .110 / 2.79 .306 / 7.77 .148 / 3.76 .400 / 10.16 .119 / 3.02 .552 / 14.02 .790 / 20.07 .300 / 7.62 .003 / 0.08 .052 / 1.32 .118 / 3.00 .105 / 2.67 .120 / 3.05 .306 / 7.77 .130 / 3.30 .318 / 8.08 MAXIMUM RATINGS IC VCC PDISS TJ TSTG θ JC 1.8 A 32 V 50 W @ TC ≤ 100 C O C D E F G H I J K L M N P R .572 / 14.53 .810 / 20.57 .320 / 8.13 .006 / 0.15 .072 / 1.83 .131 / 3.33 .230 / 5.84 -65 OC to +250 OC -65 C to +200 C 3.0 OC/W O O ORDER CODE: ASI10545 CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICES hFE IC = 10 mA IC = 10 mA IE = 1 mA VCE = 28 V TC = 25 C O NONETEST CONDITIONS RBE = 10 Ω VBE = 0 V IC = 500 mA MINIMUM TYPICAL MAXIMUM 55 55 3.5 2.0 15 150 UNITS V V V mA --- VCE = 5.0 V PG ηC VCC = 45 V POUT = 15 W f = 960 - 1215 MHz 8.1 40 dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 ...




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