AJT015
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .310 2L FLG DESCRIPTION:
The ASI AJT015 is Designed for
4x .062 x...
AJT015
NPN SILICON RF POWER
TRANSISTOR
PACKAGE STYLE .310 2L FLG DESCRIPTION:
The ASI AJT015 is Designed for
4x .062 x 45° 2xB D G H ØE F A .040 x 45° C
FEATURES:
Input Matching Network Omnigold™ Metalization System
M
I
J K L R N P
DIM A B
MINIMUM
inches / mm
MAXIMUM
inches / mm
.095 / 2.41 .100 / 2.54 .050 / 1.27 .286 / 7.26 .110 / 2.79 .306 / 7.77 .148 / 3.76 .400 / 10.16 .119 / 3.02 .552 / 14.02 .790 / 20.07 .300 / 7.62 .003 / 0.08 .052 / 1.32 .118 / 3.00
.105 / 2.67 .120 / 3.05 .306 / 7.77 .130 / 3.30 .318 / 8.08
MAXIMUM RATINGS
IC VCC PDISS TJ TSTG θ JC 1.8 A 32 V 50 W @ TC ≤ 100 C
O
C D E F G H I J K L M N P R
.572 / 14.53 .810 / 20.57 .320 / 8.13 .006 / 0.15 .072 / 1.83 .131 / 3.33 .230 / 5.84
-65 OC to +250 OC -65 C to +200 C 3.0 OC/W
O O
ORDER CODE: ASI10545
CHARACTERISTICS
SYMBOL
BVCBO BVCER BVEBO ICES hFE IC = 10 mA IC = 10 mA IE = 1 mA VCE = 28 V
TC = 25 C
O
NONETEST CONDITIONS
RBE = 10 Ω VBE = 0 V IC = 500 mA
MINIMUM TYPICAL MAXIMUM
55 55 3.5 2.0 15 150
UNITS
V V V mA ---
VCE = 5.0 V
PG ηC
VCC = 45 V
POUT = 15 W
f = 960 - 1215 MHz
8.1 40
dB %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
...