Ka Band Power GaAs MESFET Chips
AFM06P3-212, AFM06P3-213 Features
s 22 dBm Output Power @ 18 GHz s High Associated Gain, 9 dB @ 18 GHz s High Power Added Efficiency, 23% s Broadband Operation, DC–18 GHz s 0.25 µm Ti/Pd/Au Gates s Passivated Surface
Source 212 Gate Drain Source Gate Source Drain 213 Source
Description
The AFM06P3-212, 213 are high performanc...
