AFM06P3-212

Ka Band Power GaAs MESFET Chips AFM06P3-212, AFM06P3-213 Features s 22 dBm Output Power @ 18 GHz s High Associated Gain, 9 dB @ 18 GHz s High Power Added Efficiency, 23% s Broadband Operation, DC–18 GHz s 0.25 µm Ti/Pd/Au Gates s Passivated Surface Source 212 Gate Drain Source Gate Source Drain 213 Source Description The AFM06P3-212, 213 are high performance power GaAs MESFET chips in an industry standard ceramic micro-x package, having a gate length of 0.25 µm and a total gate periphery of 600 µm. These devices have excellent gain and power performance through 26 GHz, making them suitable for a wide range of commercial and military applications in oscillator and amplifier circuits. They employ Ti/Pd/Au gate metallization and surface passivation to ensure a rugged, reliable part. Absolute Maximum Ratings Characteristic Drain to Source Voltage (VDS) Gate to Source Voltage (VGS) Drain Current (IDS) Gate Current (IGS) Total Power Dissipation (PT) Storage Temperature (TST) Channel Temperature (TCH) Value 6V -4 V IDSS 1 mA 1.1 W -65 to +150°C 175°C Electrical Specifications at 25°C Parameter Saturated Drain Current (IDSS) Transconductance (gm) Pinch-Off Voltage (VP) Gate to Drain Breakdown Voltage (Vbgd) Output Power at 1 dB Compression (P1 dB) Gain at 1 dB Compression (G1 dB) Power Added Efficiency (ηadd) Test Conditions VDS = 2 V, VGS = 0 V VDS = 5 V, IDS = 1.5 mA IGD = 600 µA Min. 130.0 90.0 1.0 8.0 Typ. 200.0 120.0 3.0 12.0 22.0 VDS = 5 V, IDS = 70 mA, F = 18 GHz 9.0 23.0 5...