Low Noise/Medium Power GaAs MESFET Chips
AFM04P3-212, AFM04P3-213 Features
s Low Noise Figure, 0.6 dB @ 4 GHz s 20 dBm Output Power @ 18 GHz s High Associated Gain, 13 dB @ 4 GHz s High Power Added Efficiency, 25% s Broadband Operation, DC–26 GHz s Available in Tape and Reel Packaging
Source 212 Gate Drain Source Gate Source Drain 213 Source
Description
The...
