AFM04P3-000

Low Noise/Medium Power GaAs MESFET Chip AFM04P3-000 Features s 21 dBm Output Power @ 18 GHz s High Associated Gain, 9 dB @ 18 GHz s High Power Added Efficiency, 25% s Broadband Operation, DC–26 GHz s 0.25 µm Ti/Pd/Au Gates s Passivated Surface Chip Layout Description The AFM04P3-000 is a high performance power GaAs MESFET chip having a gate length of 0.25 µm and a total gate periphery of 400 µm. The device has excellent gain and power performance through 26 GHz, making it suitable for a wide range of commercial and military applications in oscillator and amplifier circuits. The device employs Ti/Pd/Au gate metallization and surface passivation to ensure a rugged, reliable part. Absolute Maximum Ratings Characteristic Drain to Source Voltage (VDS) Gate to Source Voltage (VGS) Drain Current (IDS) Gate Current (IGS) Total Power Dissipation (PT) Storage Temperature (TST) Channel Temperature (TCH) Value 6V -4 V IDSS 1 mA 700 mW -65 to +150°C 175°C Electrical Specifications at 25°C Parameter Saturated Drain Current (IDSS) Transconductance (gm) Pinch-off Voltage (VP) Gate to Drain Breakdown Voltage (Vbgd) Noise Figure (NF) Associated Gain (GA) Output Power at 1 dB Compression (P1 dB) Gain at 1 dB Compression (G1 dB) Power Added Efficiency (ηadd) Thermal Resistance (ΘJC) Test Conditions VDS = 2 V, VGS = 0 V VDS = 5 V, IDS = 1 mA IGD = -400 µA VDS = 2 V, IDS = 25 mA, F = 4 GHz Min. 90.0 60.0 1.0 8.0 Typ. 140.0 80.0 3.0 12.0 0.6 13.8 21.0 VDS = 5 V, IDS = 70 mA, F = 18 GHz 9.0 25.0...