AM29BDS323D

PRELIMINARY Am29BDS323D 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS s Single 1.8 volt read, program and erase (1.7 to 1.9 volt) s Multiplexed Data and Address for reduced I/O count — A0–A15 multiplexed as D0–D15 — Addresses are latched with AVD# control inputs while CE# low s Simultaneous Read/Write operation — Data can be continuously read from one bank while executing erase/program functions in other bank — Zero latency between read and write operations s Read access times at 40 MHz — Burst access times of 20 ns @ 30 pF at industrial temperature range — Asynchronous random access times of 110 ns @ 30 pF — Synchronous random access times of 120 ns @ 30 pF s Burst length — Continuous linear burst s Power dissipation (typical values, 8 bits switching, CL = 30 pF) — Burst Mode Read: 25 mA — Simultaneous Operation: 40 mA — Program/Erase: 15 mA — Standby mode: 0.2 µA s Sector Architecture — Eight 4 Kword sectors and sixty-three sectors of 32 Kwords each — Bank A contains the eight 4 Kword sectors and fifteen 32 Kword sectors — Bank B contains forty-eight 32 Kword sectors s Sector Protection — Software command sector locking — WP# protects the last two boot sectors — All sectors locked when VPP = VIL s Software command set compatible with JEDEC 42.4 standards — Backwards compatible with Am29F and Am29LV families s Minimum 1 million erase cycle guarantee per sector s 20-year data retention at 125°C — Rel...