AT49BV1614

Features 2.7V to 3.3V Read/Write Access Time - 90 ns Sector Erase Architecture – Thirty 32K Word (64K Byte) Sectors with Individual Write Lockout – Eight 4K Word (8K Byte) Sectors with Individual Write Lockout – Two 16K Word (32K Byte) Sectors with Individual Write Lockout Fast Word Program Time - 20 µs Fast Sector Erase Time - 200 ms Dual Plane Organization, Permitting Concurrent Read while Program/Erase Memory Plane A: Eight 4K Word, Two 16K Word and Six 32K Word Sectors Memory Plane B: Twenty-four 32K Word Sectors Erase Suspend Capability – Supports Reading/Programming Data from Any Sector by Suspending Erase of Any Different Sector Low-power Operation – 25 mA Active – 10 µA Standby Data Polling, Toggle Bit, Ready/Busy for End of Program Detection Optional VPP Pin for Fast Programming RESET Input for Device Initialization Sector Program Unlock Command TSOP, CBGA, and µBGA Package Options Top or Bottom Boot Block ...