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AT41586 Dataheets PDF



Part Number AT41586
Manufacturers ETC
Logo ETC
Description Low Cost General Purpose Transistors
Datasheet AT41586 DatasheetAT41586 Datasheet (PDF)

Low Cost General Purpose Transistors Technical Data AT-41586 Features • Low Noise Figure 1.4 dB Typical at 1 GHz 1.7 dB Typical at 2 GHz • High Associated Gain 17.0 dB Typical at 1 GHz 12.5 dB Typical at 2 GHz • Low Cost Surface Mount Package • Tape and Reel Option Available Description Hewlett-Packard’s AT-41586 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41586 is housed in a low cost surface mount .085" diameter plastic package. The 4.

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Low Cost General Purpose Transistors Technical Data AT-41586 Features • Low Noise Figure 1.4 dB Typical at 1 GHz 1.7 dB Typical at 2 GHz • High Associated Gain 17.0 dB Typical at 1 GHz 12.5 dB Typical at 2 GHz • Low Cost Surface Mount Package • Tape and Reel Option Available Description Hewlett-Packard’s AT-41586 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41586 is housed in a low cost surface mount .085" diameter plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 14 emitter finger interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications. Applications include use in wireless systems as an LNA, gain stage, buffer, oscillator, and mixer. An optimum noise match near 50 Ω in the 1 to 2 GHz frequency range, makes this device easy to use as a low noise amplifier. The AT-41586 bipolar transistor is fabricated using Hewlett-Packard’s 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. 86 Plastic Package Pin Connections EMITTER 4 24 21 18 G A (dB) BASE 1 415 COLLECTOR 3 15 12 9 GA 2 EMITTER 3 0 0.5 NFO 2 0 NFO (dB) 6 4 1.0 2.0 3.0 4.0 FREQUENCY (GHz) Figure 1. AT-41586 Noise Figure and Associated Gain vs. Frequency at VCE = 8 V, IC = 10 mA. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device. 2 AT-41586 Absolute Maximum Ratings[1] Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation[2] Junction Temperature Storage Temperature Units V V V mA mW °C °C Absolute Maximum[1] 1.5 20 12 60 500 150 -65 to 150 Thermal Resistance:[3] θjc =165° C/W Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. TCASE = 25°C. 3. See MEASUREMENTS section, “Thermal Resistance,” for more information. Electrical Specifications, TA = 25°C, VCE = 8 V Symbol NFo Parameters and Test Conditions Optimum Noise Figure: IC = 10 mA f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz f = 1.0 GHz f = 2.0 GHz f = 2.0 GHz f = 2.0 GHz Unit dB Min. Typ. 1.4 1.7 3.0 17.0 12.5 8.0 17.0 11.0 18.0 13.0 8.0 150 Max. GA Gain @ NF0: IC = 10 mA dB |S21E|2 P1dB G1dB fT hFE ICBO IEBO Insertion Power Gain: IC = 25 mA Power Output @ 1 dB Gain Compression: IC = 25 mA 1 dB Compressed Gain: IC = 25 mA Gain Bandwidth Product: IC = 25 mA Forward Current Transfer Ratio: IC = 10 mA Collector Cutoff Current: VCB = 8 V Emitter Cutoff Current: VEB = 1 V dB dBm dB GHz 30 µA µA 270 0.2 1.0 Note: 1. For more information on outlines 86, refer to “Tape and Reel Packaging for Surface Mount Devices.” 16 20 18 P1dB 20 1.0 GHz G .


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