AT41486

Up to 6 GHz Low Noise Silicon␣ Bipolar Transistor Technical Data AT-41486 Features Low Noise Figure: 1.4 dB Typical at 1.0␣ GHz 1.7 dB Typical at 2.0␣ GHz High Associated Gain: 18.0 dB Typical at 1.0␣ GHz 13.0 dB Typical at 2.0␣ GHz High Gain-Bandwidth Product: 8.0 GHz Typical fT Surface Mount Plastic Package Tape-and-Reel Packaging Option Available[1] Note: 1. Refer to “Tape-and-Reel Packaging for Semiconductor Devices”. BASE 1 414 emitter-to-emitter pitch enables this transistor to be used in many different functions. The 14 emitter finger interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications. Applications include use in wireless systems as an LNA, gain stage, buffer, oscillator, and mixer. An optimum noise match near 50 Ω at 900 MHz, makes this device easy to use as a low noise amplifier. The AT-41486 bipolar transistor is fabricated using Hewlett-Packard’s 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device. 86 Plastic Package Pin Connections EMITTER 4 COLLECTOR 3 2 EMITTER Description Hewlett-Packard’s AT-41486 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41486 is housed in...