AT32032

AT-32032 3-Lead SC-70 (SOT-323) Surface Mount Plastic Package Pin Configuration COLLECTOR 32Y BASE EMITTER AT-32032 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation[2, 3] Junction Temperature Storage Temperature Units V V V mA mW °C °C Absolute Maximum[1] 1.5 11 5.5 32 200 150 -65 to 150 Thermal Resistance[2] : θjc=350°C/W Electrical Specifications, TA=25°C Symbol NF GA hFE ICBO IEBO Parameters and Test Conditions Noise Figure f=0.9 GHz VCE=2.7V, IC=5mA f=1.8 GHz Associated Gain f=0.9 GHz VCE=2.7V, IC=5mA f=1.8 GHz Forward Current Transfer Ratio VCE=2.7V, IC=5mA Collector Cutoff Current VCB=3V Emitter Cutoff Current VEB=1V Units dB dB Min. Typ. 1.0 1.25 15 10.5 Max. 1.3 13.5 – µA µA 70 300 0.2 1.5 AT-32032 Characterization Information, TA=25°C Symbol P1dB G1dB IP3 |S21|E2 Parameters and Test Conditions Power at 1 dB Gain Compression (opt tuning) VCE=2.7V, IC=20mA f=0.9 GHz Gain at 1 dB Gain Compression (opt tuning) VCE=2.7V, IC=20mA f=0.9GHz Output Third Order Intercept Point (opt turning) VCE=2.7V, IC=20mA f=0.9 GHz Gain in 50 Ω System VCE=2.7V, IC=2mA f=0.9 GHz Units dBm dB dBm dB Typ. 13 15.5 23 11.5 AT-32032 Typical Performance 2.5 2.5 2.5 2.0 2.0 2.0 NOISE FIGURE (dB) NOISE FIGURE (dB) 1.5 1.5 NOISE FIGURE (dB) 2 mA 5 mA 10 mA 0 1.0 2.0 3.0 4.0 1.5 1.0 1.0 1.0 0.5 0.5 0.5 2 mA 5 mA 10 mA 0 1.0 2.0 3.0 4.0 0 0 1.0 2.0 ...