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AT726 Dataheets PDF



Part Number AT726
Manufacturers Power Semiconductors
Logo Power Semiconductors
Description PHASE CONTROL THYRISTOR
Datasheet AT726 DatasheetAT726 Datasheet (PDF)

ANSALDO Ansaldo Trasporti s.p.a. Unita' Semiconduttori Via N. Lorenzi 8 - I 16152 GENOVA - ITALY Tel. int. +39/(0)10 6556549 - (0)10 6556488 Fax Int. +39/(0)10 6442510 Tx 270318 ANSUSE I - PHASE CONTROL THYRISTOR AT726 Repetitive voltage up to Mean on-state current Surge current 1600 V 2400 A 38 kA FINAL SPECIFICATION feb 97 - ISSUE : 02 Symbol Characteristic Conditions Tj [°C] 125 125 125 Value Unit BLOCKING V V V I I RRM RSM DRM RRM DRM Repetitive peak reverse voltage Non-repetiti.

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ANSALDO Ansaldo Trasporti s.p.a. Unita' Semiconduttori Via N. Lorenzi 8 - I 16152 GENOVA - ITALY Tel. int. +39/(0)10 6556549 - (0)10 6556488 Fax Int. +39/(0)10 6442510 Tx 270318 ANSUSE I - PHASE CONTROL THYRISTOR AT726 Repetitive voltage up to Mean on-state current Surge current 1600 V 2400 A 38 kA FINAL SPECIFICATION feb 97 - ISSUE : 02 Symbol Characteristic Conditions Tj [°C] 125 125 125 Value Unit BLOCKING V V V I I RRM RSM DRM RRM DRM Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak off-state voltage Repetitive peak reverse current Repetitive peak off-state current V=VRRM V=VDRM 1600 1700 1600 100 100 V V V mA mA 125 125 CONDUCTING I I I V V r T (AV) T (AV) TSM Mean on-state current Mean on-state current Surge on-state current I² t On-state voltage Threshold voltage On-state slope resistance 180° sin, 50 Hz, Th=55°C, double side cooled 180° sin, 50 Hz, Tc=85°C, double side cooled sine wave, 10 ms without reverse voltage On-state current = 6000 A 25 125 125 125 2400 1885 38 7220 x1E3 1.65 0.77 0.160 A A kA A²s V V mohm I² t T T(TO) T SWITCHING di/dt dv/dt td tq Q rr I rr I I H L Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. Gate controlled delay time, typical Circuit commutated turn-off time, typical Reverse recovery charge Peak reverse recovery current Holding current, typical Latching current, typical From 75% VDRM up to 2300 A, gate 10V 5ohm Linear ramp up to 70% of VDRM VD=100V, gate source 25V, 10 ohm , tr=.5 µs dV/dt = 20 V/µs linear up to 75% VDRM di/dt=-20 A/µs, I= 1500 A VR= 50 V VD=5V, gate open circuit VD=5V, tp=30µs 125 125 25 125 25 25 200 500 1 250 A/µs V/µs µs µs µC A 300 700 mA mA GATE V I V V I V P P GT GT GD FGM FGM RGM GM G Gate trigger voltage Gate trigger current Non-trigger gate voltage, min. Peak gate voltage (forward) Peak gate current Peak gate voltage (reverse) Peak gate power dissipation Average gate power dissipation VD=5V VD=5V VD=VDRM 25 25 125 3.5 200 0.25 30 10 5 V mA V V A V W W Pulse width 100 µs 150 2 MOUNTING R R T F th(j-h) th(c-h) j Thermal impedance, DC Thermal impedance Operating junction temperature Mounting force Mass ORDERING INFORMATION : AT726 S 16 standard specification Junction to heatsink, double side cooled Case to heatsink, double side cooled 17 3 -30 / 125 40.0 / 50.0 1000 °C/kW °C/kW °C kN g VDRM&VRRM/100 AT726 PHASE CONTROL THYRISTOR FINAL SPECIFICATION feb 97 - ISSUE : 02 ANSALDO DISSIPATION CHARACTERISTICS SQUARE WAVE Th [°C] 130 120 110 100 90 30° 80 60° 70 90° 60 50 0 500 1000 1500 120° 180° DC 2000 2500 3000 3500 IF(AV) [A] PF(AV) [W] 4500 DC 4000 180° 3500 90° 120° 3000 2500 2000 1500 1000 500 0 0 500 1000 1500 2000 2500 3000 3500 IF(AV) [A] 30° 60° AT726 PHASE CONTROL THYRISTOR FINAL SPECIFICATION feb 97 - ISSUE : 02 ANSALDO DISSIPATION CHARACTERISTICS SINE WAVE Th [°C] 130 120 110 100 90 30° 80 60° 70 90° 60 50 0 500 1000 1500 120°.


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