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AT52BR1672 Dataheets PDF



Part Number AT52BR1672
Manufacturers ATMEL Corporation
Logo ATMEL Corporation
Description 16-megabit Flash and 2-megabit/ 4-megabit SRAM Stack Memory
Datasheet AT52BR1672 DatasheetAT52BR1672 Datasheet (PDF)

Features • 16-Mbit Flash and 2-Mbit/4-Mbit SRAM • Single 66-ball 8 mm x 10 mm x 1.2 mm CBGA Package • 2.7V to 3.3V Operating Voltage Flash • 2.7V to 3.3V Read/Write • Access Time – 85 ns • Sector Erase Architecture • • • • – Thirty-one 32K Word (64K Byte) Sectors with Individual Write Lockout – Eight 4K Word (8K Byte) Sectors with Individual Write Lockout Fast Word Program Time – 20 µs Fast Sector Erase Time – 300 ms Dual-plane Organization, Permitting Concurrent Read While Program/Erase – Memo.

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Features • 16-Mbit Flash and 2-Mbit/4-Mbit SRAM • Single 66-ball 8 mm x 10 mm x 1.2 mm CBGA Package • 2.7V to 3.3V Operating Voltage Flash • 2.7V to 3.3V Read/Write • Access Time – 85 ns • Sector Erase Architecture • • • • – Thirty-one 32K Word (64K Byte) Sectors with Individual Write Lockout – Eight 4K Word (8K Byte) Sectors with Individual Write Lockout Fast Word Program Time – 20 µs Fast Sector Erase Time – 300 ms Dual-plane Organization, Permitting Concurrent Read While Program/Erase – Memory Plane A: Eight 4K Word and Seven 32K Word Sectors – Memory Plane B: Twenty-four 32K Word Sectors Erase Suspend Capability – Supports Reading and Programming from Any Sector by Suspending Erase of a Different Sector – Supports Reading Any Word by Suspending Programming of Any Other Word Low-power Operation – 30 mA Active – 10 µA Standby Data Polling, Toggle Bit, Ready/Busy for End of Program Detection VPP Pin for Accelerated Program/Erase Operations RESET Input for Device Initialization Sector Lockdown Support Top/Bottom Block Configuration 128-bit Protection Register • • • • • • • 16-megabit Flash and 2-megabit/ 4-megabit SRAM Stack Memory AT52BR1672(T) AT52BR1674(T) Preliminary SRAM • • • • • • 2-megabit (128K x 16)/4-megabit (256K x 16) 2.7V to 3.3V V CC Operating Voltage 70 ns Access Time Fully Static Operation and Tri-state Output 1.2V (Min) Data Retention Industrial Temperature Range Device Number AT52BR1672(T) AT52BR1674(T) Flash Plane Architecture 12M + 4M 12M + 4M Flash Configuration 16M (1M x 16) 16M (1M x 16) SRAM Configuration 2M (128K x 16) 4M (256K x 16) Rev. 2604B–STKD–09/02 1 CBGA Top View 1 2 3 4 5 6 7 8 9 10 11 12 A NC NC NC A11 A15 A14 A13 A12 GND NC NC NC B A16 A8 A10 A9 I/O15 SWE I/O14 I/O7 C WE RDY BUSY I/O13 I/O6 I/O4 I/O5 D SGND RESET I/O12 SCS2 SVcc Vcc E NC Vpp A19 I/O11 I/O10 I/O2 I/O3 F SLB SUB SOE I/O9 I/O8 I/O0 I/O1 G A18 A17 A7 A6 A3 A2 A1 SCS1 H NC NC NC A5 A4 A0 CE GND OE NC NC NC Pin Configurations Pin Name A0 - A16 A0 - A17 A18 - A19 CE OE/SOE WE/SWE VCC VPP I/O0-I/O15 SCS1, SCS2 RDY/BUSY SVCC GND/SGND SUB SLB NC RESET Function Flash/SRAM Common Address Input for 2M SRAM Flash/SRAM Common Address Input for 4M SRAM Flash Address Input Flash Chip Enable Flash/SRAM, Output Enable Flash/SRAM, Write Enable Flash Power Supply Optional Flash Power Supply for Faster Program/Erase Operations Data Inputs/Outputs SRAM Chip Select Flash Ready/Busy Output SRAM Power Supply Flash/SRAM GND SRAM Upper Byte SRAM Lower Byte No Connect Flash Reset 2 AT52BR1672(T)/1674(T) 2604B–STKD–09/02 AT52BR1672(T)/1674(T) Description The AT52BR1672(T) combines a 16-megabit Flash (1M x 16) and a 2-megabit SRAM (organized as 128K x 16) in a stacked CBGA package; while the AT52BR1674(T) combines a 16megabit Flash (1M x 16) and a 4-megabit SRAM (organized as 256K x 16) in a stacked CBGA package. Both devices operate at 2.7V to 3.3V in the industrial temperature range. The modules use a 16-megabit Flash with dual plane architecture for concurrent read/write operations. The Flash is organized as 12M + 4M for planes B and A, respectively. Block Diagram ADDRESS OE WE SOE SWE RESET CE FLASH RDY/BUSY SRAM SCS1 DATA Absolute Maximum Ratings Temperature under Bias .................................. -40°C to +85°C Storage Temperature ..................................... -55°C to +150°C All Input Voltages except VPP and RESET (including NC Pins) with Respect to Ground .....................................-0.2V to +3.3V Voltage on VPP with Respect to Ground ..................................-0.2V to + 6.25V Voltage on RESET with Respect to Ground ...................................-0.2V to +13.5V All Output Voltages with Respect to Ground .....................................-0.2V to +0.2V *NOTICE: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. DC and AC Operating Range AT52BR1672(T)/1674(T) Operating Temperature (Case) VCC Power Supply Industrial -40°C - 85°C 2.7V to 3.3V 3 2604B–STKD–09/02 16-megabit Flash Description The 16-megabit Flash memory organized as 1,048,576 words of 16 bits each. The x16 data appears on I/O0 - I/O15. The memory is divided into 39 sectors for erase operations.The device has CE and OE control signals to avoid any bus contention. This device can be read or reprogrammed using a single 2.7V power supply, making it ideally suited for in-system programming. The device powers on in the read mode. Command sequences are used to place the device in other operation modes such as program and erase. The device has the capability to protect the data in any sector (see Sector Lockdown section). The device is segmented into two memory planes. .


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