BCP52-10

www.DataSheet4U.com BCP51...BCP53 PNP Silicon AF Transistors
For AF driver and output stages
High collector current
Low collector-emitter saturation voltage
Complementary types: BCP54...BCP56 (NPN) 4 3 2 1 VPS05163 Type BCP51 BCP51-10 BCP51-16 BCP52 BCP52-10 BCP52-16 BCP53 BCP53-10 BCP53-16 Marking BCP 51 1=B BCP 51-10 1 = B BCP 51-16 1 = B BCP 52 1=B BCP 52-10 1 = B BCP 52-16 1 = B BCP 53 1=B BCP 53-10 1 = B BCP 53-16 1 = B Pin Configuration 2=C 2=C 2=C 2=C 2=C 2=C 2=C 2=C 2=C 3=E 3=E 3=E 3=E 3=E 3=E 3=E 3=E 3=E 4=C 4=C 4=C 4=C 4=C 4=C 4=C 4=C 4=C Package SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 1 Nov-29-2001 BCP51...BCP53 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage RBE
1k Collector-base voltage Emitter-base voltage Symbol VCEO VCER VCBO VEBO BCP51 45 45 45 5 BCP52 60 60 60 5 BCP53 80 100 100 5 Unit V DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 124 °C Junction temperature Storage temperature IC ICM IB IBM Ptot Tj Tstg 1 1.5 100 200 1.5 150 -65 ... 150 A mA W °C Thermal Resistance Junction - soldering point1) RthJS
17 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 Nov-29-2001 BCP51...BCP53 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 V(BR)CEO typ. max. Unit V 45...