BCP51-16

PNP Silicon AF Transistors For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP54 ... BCP56 (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 BCP51...-BCP53... Type BCP51 BCP51-16 BCP52-16 BCP53-10 BCP53-16 Marking Pin Configuration * 1=B 2=C 3=E 4=C - - * 1=B 2=C 3=E 4=C - - * 1=B 2=C 3=E 4=C - - * 1=B 2=C 3=E 4=C - - * 1=B 2=C 3=E 4=C - - * Marking is the same as type-name Package SOT223 SOT223 SOT223 SOT223 SOT223 1 2011-10-13 BCP51...-BCP53... Maximum Ratings Parameter Collector-emitter voltage BCP51 BCP52 BCP53 Symbol VCEO Value 45 60 80 Collector-base voltage BCP51 BCP52 BCP53 VCBO 45 60 100 Emitter-base voltage Collector current Peak collector current, tp ≤ 10 ms Base current Peak base current Total power dissipationTS ≤ 120°C VEBO 5 IC 1 ICM 1.5 IB 100 IBM 200 Ptot 2 Junction temperature Tj 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Junction - soldering point1) RthJS ≤ 15 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V A mA W °C Unit K/W 2 2011-10-13 BCP51...-BCP53... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 , BCP51 IC = 10 mA, IB = 0 , BCP52 IC = 10 mA, IB = 0 , BCP5...