PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter satu...
PNP Silicon AF
Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types:
BC847...-BC850... (
NPN)
Pb-free (RoHS compliant) package Qualified according AEC Q1011)
BC857...-BC860...
1BC857BL3 is not qualified according AEC Q101
Type BC857A BC857B BC857BL3* BC857BW BC857C BC857CW BC858A BC858B BC858BW BC858C BC858CW BC859C BC860B BC860BW BC860CW
Marking 3Es 1=B 3Fs 1=B 3F 1=B 3Fs 1=B 3Gs 1=B 3Gs 1=B 3Js 1=B 3Ks 1=B 3Ks 1=B 3Ls 1=B 3Ls 1=B 4Cs 1=B 4Fs 1=B 4Fs 1=B 4Gs 1=B
Pin Configuration
2=E 3=C -
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2=E 3=C -
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2=E 3=C -
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2=E 3=C -
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2=E 3=C -
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2=E 3=C -
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2=E 3=C -
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2=E 3=C -
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2=E 3=C -
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2=E 3=C -
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2=E 3=C -
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2=E 3=C -
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2=E 3=C -
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2=E 3=C -
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2=E 3=C -
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* Not qualified according AEC Q101
Package SOT23 SOT23 TSLP-3-1 SOT323 SOT23 SOT323 SOT23 SOT23 SOT323 SOT23 SOT323 SOT23 SOT23 SOT323 SOT323
1 2011-09-19
BC857...-BC860...
Maximum Ratings Parameter Collector-emitter voltage BC857..., BC860... BC858..., BC859...
Symbol VCEO
Value
45 30
Collector-base voltage BC857..., BC860... BC858..., BC859...
Emitter-base voltage
Collector current
Peak collector current, tp ≤ 10 ms Total power dissipation TS ≤ 71 °C, BC857-BC860 TS ≤ 135 °C, BC857BL3 TS ≤ 124 °C, BC857W-BC860W Junction temperature
Storage temperature
Thermal Resistance Parameter Junction - soldering point1) BC857-BC860 BC857BL3 BC857W-BC860W
VCBO
...