Transistors
BC858BW / BC858B
PNP General Purpose Transistor
BC858BW / BC858B
zFeatures 1) BVCEO < -30V (IC=-1mA) 2) ...
Transistors
BC858BW / BC858B
PNP General Purpose
Transistor
BC858BW / BC858B
zFeatures 1) BVCEO < -30V (IC=-1mA) 2) Complements the BC848B / BC848BW.
zPackage, marking and packaging specifications
Paet No. Pakaging type
Marking Code
Basic ordering unit (pieces)
BC858BW UMT3 G3K T106 3000
BC858B SST3 G3K T116 3000
zAbsolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current
Symbol VCBO VCEO VEBO IC
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
∗ When mounted on 7 × 5 × 0.6 mm ceramic board.
Limits −30 −30 −5 −0.1 0.2 0.35 150 −65 to +150
Unit V V V A
W∗
˚C ˚C
zExternal dimensions (Unit : mm)
BC858BW
SOT-323
ROHM : UMT3 EIAJ : EC-70
2.0±0.2 1.3±0.1 0.65 0.65 (1) (2)
0.9±0.1 0.2 0.7±0.1
1.2±0.1 2.1±0.1 0.1~0.4
00.1
(3)
0.3+- 00.1
0.15±0.05
All terminals have same dimensions
(1) Emitter (2) Base (3) Collector
BC858B
SOT-23
ROHM : SST3
2.9±0.2 1.9±0.2 0.95 0.95
0.95
+0.2 −0.1
0.45±0.1
(1) (2) (3)
1.3-+00..21 2.4±0.2
0~0.1 0.2Min.
0.4+−00..015
0.15−+00..016
All terminals have same dimensions
(1) Emitter (2) Base (3) Collector
zElectrical characteristics (Ta=25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage
Symbol BVCBO BVCEO BVEBO
Collector cutoff current
ICBO
Collector-emitter saturation voltage
Base-emitter saturation voltage DC current transfer ratio Transition...