BC858

BC857 BC858 SMALL SIGNAL PNP TRANSISTORS Type BC857A BC857B BC858A BC858B Marking 3E 3F 3J 3K s SILICON EPITAXIAL PLANAR PNP TRANSISTORS s MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS s VERY LOW NOISE AF AMPLIFIER s NPN COMPLEMENTS FOR BC857 IS BC847 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS S ym b o l Parameter VCES V CBO V CEO V EBO IC ICM IBM IEM Ptot Tstg Tj Collector-Emit ter Voltage (VBE = 0) Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Peak Current Emitter Peak Current Total Dissipation at Tc = 25 oC Storage Temperature Max. O perating Junction Temperature October 1997 Value BC857 BC858 -50 -30 -50 -30 -45 -30 -5 -0.1 -0.2 -0.2 -0.2 300 -65 to 150 150 Uni t V V V V A A A A mW oC oC 1/5 BC857/BC858 THERMAL DATA Rthj-amb Thermal Resistance Junction-Ambient Rth j-SR Thermal Resistance Junction-Substrat e Mounted on a ceramic substrate area = 10 x 8 x 0.6 mm Max Max 420 330 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol P a ram et er Test Conditions ICBO Collector Cut-off Current (IE = 0) VCE = -30 V VCE = -30 V Ta mb = 150 oC V(BR)CES ∗ Collect or-Emitter Breakdown Voltage (VBE = 0) IC = -10 µA for BC857 for BC858 V( BR)CBO ∗ Collect or-Base Breakdown Voltage (IE = 0) IC = -10 µA for BC857 for BC858 V( BR)CEO ∗ Collect or-Emitter Breakdow...