DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
BC856T; BC857T PNP general purpose transistors
Product specification Superse...
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
BC856T; BC857T
PNP general purpose
transistors
Product specification Supersedes data of 1997 Jul 07 1999 Apr 26
Philips Semiconductors
Product specification
PNP general purpose
transistors
FEATURES Low current (max. 100 mA) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification especially in portable equipment. DESCRIPTION
PNP transistor in an SC-75 plastic package.
NPN complements: BC846T and BC847T. MARKING TYPE NUMBER BC856AT BC856BT BC857AT MARKING CODE 3A 3B 3E TYPE NUMBER BC857BT BC857CT MARKING CODE 3F 3G
handbook, halfpage
BC856T; BC857T
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
3
3 1
1 Top view
2
2
MAM362
Fig.1 Simplified outline (SC-75) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage BC856AT; BC856BT BC857AT; BC857BT; BC857CT VCEO collector-emitter voltage BC856AT; BC856BT BC857AT; BC857BT; BC857CT VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1.
Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − − − − − − − −65 − −65 −65 −45 −5 −100 −200 −100 150 +150 150 +150 V V V mA mA mA mW °C °C °C CONDITIONS open emitter − − −80 −50 V V MIN. MAX. UNIT
1999 Apr 26
2
Phili...