BC857CLT1

BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon Features http://onsemi.com Pb−Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Collector-Emitter Voltage BC856 BC857 BC858, BC859 BC856 BC857 BC858, BC859 Symbol VCEO Value −65 −45 −30 −80 −50 −30 −5.0 −100 Unit V 2 EMITTER Collector-Base Voltage VCBO V 1 V mAdc 2 3 SOT−23 CASE 318 STYLE 6 Emitter−Base Voltage Collector Current − Continuous VEBO IC Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MARKING DIAGRAM 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 −55 to +150 mW mW/°C °C/W °C 556 mW mW/°C °C/W Max Unit 1 xxM 2 xx = Device Code M = Date Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Preferred devices are recommended choices for future use a...