BC857CDW1T1

BC857BDW1T1, BC857CDW1T1, BC858BDW1T1, BC858CDW1T1 Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. Device Marking: BC857BDW1T1 = 3F BC857CDW1T1 = 3G BC858BDW1T1 = 3K BC858CDW1T1 = 3L MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC BC857 –45 –50 –5.0 –100 BC858 –30 –30 –5.0 –100 Unit V V V mAdc THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation PD Per Device FR– 5 Board (1) TA = 25°C Derate Above 25°C Thermal Resistance, Junction to Ambient RqJA Junction and Storage Temperature Range TJ, Tstg 1. FR–5 = 1.0 x 0.75 x 0.062 in Max 380 250 3.0 328 – 55 to +150 Unit mW mW/°C °C/W °C http://onsemi.com (3) (2) (1) Q1 Q2 (4) (5) (6) 6 54 1 23 SOT–363/SC–88 CASE 419B STYLE 1 DEVICE MARKING See Table ORDERING INFORMATION Device Package Shipping BC857BDW1T1 SOT–363 3000 Units/Reel BC857CDW1T1 SOT–363 3000 Units/Reel BC858BDW1T1 SOT–363 3000 Units/Reel BC858CDW1T1 SOT–363 3000 Units/Reel Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2000 1 February, 2000 – Rev. 0 Publication Order Number: BC857BDW1T1/D BC857BDW1T1, BC857CDW1T1, BC858BDW1T1, BC858CDW1T1 ELEC...