BC857BS

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BC857BS PNP general purpose double transistor Product data sheet Supersedes data of 1997 Jul 09 1999 Apr 26 NXP Semiconductors PNP general purpose double transistor Product data sheet BC857BS FEATURES Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number of components and boardspace No mutual interference between the transistors. APPLICATIONS General purpose switching and amplification. DESCRIPTION PNP double transistor in an SC-88; SOT363 plastic package. NPN complement: BC847BS. MARKING TYPE NUMBER BC857BS MARKING CODE 3Ft PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 handbook, halfpage 654 12 3 Top view 65 4 TR2 TR1 123 MAM339 Fig.1 Simplified outline (SC-88; SOT363) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS Per transistor VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Per device Ptot total power dissipation open emitter open base open collector Tamb ≤ 25 °C Tamb ≤ 25 °C; note 1 Note 1. Device mounted on an FR4 printed-circuit board. MIN. MAX. UNIT − −50 V − −45 V − ...