BC857B

® BC857B SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Type BC857B Marking 3F s SILICON EPITAXIAL PLANAR PNP TRANSISTOR )s MINIATURE SOT-23 PLASTIC PACKAGE t(sFOR SURFACE MOUNTING CIRCUITS cs TAPE AND REEL PACKING us THE NPN COMPLEMENTARY TYPE IS dBC847B Pro t(s)APPLICATIONS te cs WELL SUITABLE FOR PORTABLE le uEQUIPMENT ds SMALL LOAD SWITCH TRANSISTOR WITH so roHIGH GAIN AND LOW SATURATION ) - Ob lete PVOLTAGE SOT-23 INTERNAL SCHEMATIC DIAGRAM Obsolettee PPrroodduucctt((ss) - ObsoABSOLUTE MAXIMUM RATINGS oleSymbol Parameter sVCBO Collector-Base Voltage (IE = 0) ObVCEO Collector-Emitter Voltage (IB = 0) Value -50 -45 Unit V V VEBO Emitter-Base Voltage (IC = 0) -5 V IC Collector Current -100 mA ICM Collector Peak Current Ptot Total Dissipation at TC = 25 oC Tstg Storage Temperature -200 250 -65 to 150 mA mW oC Tj Max. Operating Junction Temperature 150 oC June 2002 1/4 BC857B THERMAL DATA Rthj-amb Thermal Resistance Junction-Ambient Device mounted on a PCB area of 1 cm2. Max 500 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE = 0) VCB = -30 V VCB = -30 V TC = 150 oC -1 -15 nA -5 µA IEBO Emitter Cut-off Current VEB = -5 V -100 nA (IC = 0) V(BR)CBO Collector-Base )Breakdown Voltage t(s(IE = 0) IC = -10 µA cV(BR)CEO∗ Collector-Emitter uBreakdown Voltage d(IB = 0) IC = -2 mA Pro t(s)V(BR)EBO Emitter-Base Breakdown Vol...