BC857B

PNP small signal transistor BC857B Features 1) Ideal for switching and AF amplifier applications. 2) High current gain. Packaging specifications Package Type Code Basic ordering unit (pieces) BC857B Taping T116 3000 Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Collector power dissipation PC Junction temperature Tj Storage temperature Tstg ∗ Mounted on a 7×5×0.6 mm CERAMIC SUBSTRATE Limits −50 −45 −5 −0.1 0.20 0.35 150 −65 to 150 Unit V V V A W W∗ °C °C Dimensions (Unit : mm) BC857B 1.3 2.4 0.2Min. 2.9 0.4 (3) 0.95 0.45 (1)Emitter (2)Base (3)Collector (2) (1) 0.95 0.95 1.9 0.15 Each lead has same dimensions Abbreviated symbol : G3F Electrical characteristics (Ta=25C) Parameter Symbol Collector-emitter breakdown voltage BVCEO Collector-base breakdown voltage BVCBO Emitter-base breakdown voltage BVEBO Collector-base cutoff current ICBO VCE(sat1) Collector-emitter saturation voltage VCE(sat2) Base-emitter voltage DC current transfer ratio Transition frequency VBE(on) hFE fT Collector outpu capacitance Cob Collector-base cutoff current ICBO Min. −45 −50 −5 − − − −0.6 210 − − − Typ. Max. Unit −−V −−V −−V − −0.015 μA − −0.3 V − −0.65 V − −0.75 V − 480 − 250 − MHz − 4.5 pF − −4 μA Conditions IC= −1mA IC= −50μA IE= −50μA VCB= −30V IC/IB= −10mA/ −0.5mA IC/IB= −100mA/ −5mA VCE= −5V, IC= −10mA VCE= 5V, IC= −2mA VCE= −5V, IE=...