MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
General Purpose Transistors
PNP Silicon
COLLECTOR 3
1 BASE
BC856ALT1,BLT1 BC8...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
General Purpose
Transistors
PNP Silicon
COLLECTOR 3
1 BASE
BC856ALT1,BLT1 BC857ALT1,BLT1 BC858ALT1,BLT1,
CLT1
MAXIMUM RATINGS
2 EMITTER
Rating
Symbol BC856 BC857 BC858 Unit
Collector – Emitter Voltage Collector – Base Voltage
VCEO
–65
–45
–30
VCBO
–80
–50
–30
V V
Emitter – Base Voltage Collector Current — Continuous THERMAL CHARACTERISTICS
VEBO IC
–5.0 –100
–5.0 –100
–5.0 –100
V mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C Derate above 25°C
PD
225 mW 1.8 mW/°C
Thermal Resistance, Junction to Ambient
RqJA
556
°C/W
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C Derate above 25°C
PD 300 mW
2.4 mW/°C
Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING
RqJA TJ, Tstg
417 – 55 to +150
°C/W °C
BC856ALT1 = 3A; BC856BLT1 = 3B; BC857ALT1 = 3E; BC857BLT1 = 3F; BC858ALT1 = 3J; BC858BLT1 = 3K; BC858CLT1 = 3L
Motorola Preferred Devices
3 1
2 CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = –10 mA)
BC856 Series BC857 Series BC858 Series
V(BR)CEO
–65 –45 –30
— — —
— — —
V
Collector – Emitter Breakdown Voltage (IC = –10 µA, VEB = 0)
BC856 Series BC857 Series BC858 Series
V(BR)CES
–80 –50 –30
— — —
— — —
V
Collector – Base Breakdown Voltage (IC = –...