BC850W

BC856W...BC860W PNP Silicon AF Transistors
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: 3 BC846W, BC847W, BC848W BC849W, BC850W (NPN) 2 1 VSO05561 Type BC856AW BC856BW BC857AW BC857BW BC857CW BC858AW BC858BW BC858CW BC859AW BC859BW BC859CW BC860BW BC860CW Marking 3As 3Bs 3Es 3Fs 3Gs 3Js 3Ks 3Ls 4As 4Bs 4Cs 4Fs 4Gs 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C Package SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 1 Dec-11-2001 BC856W...BC860W Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Peak base current Peak emitter current Total power dissipation, TS = 124 °C Junction temperature Storage temperature Symbol VCEO VCBO VCES VEBO IC ICM IBM IEM Ptot Tj Tstg BC856W BC857W BC858W Unit BC860W BC859W 65 80 80 5 45 50 50 5 100 200 200 200 250 150 -65 ... 150 mW °C 30 30 30 5 mA mA V Thermal Resistance Junction - soldering point 1) RthJS
105 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BC856W BC857/860W BC858/859W Symbol min. V(BR)CEO Values typ....