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BC847BDW1T1G Dataheets PDF



Part Number BC847BDW1T1G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Dual General Purpose Transistors
Datasheet BC847BDW1T1G DatasheetBC847BDW1T1G Datasheet (PDF)

BC846BDW1T1, BC847BDW1T1, BC848CDW1T1 Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. • Device Marking: BC846BDW1T1 = 1B BC847BDW1T1 = 1F BC848CDW1T1 = 1L Features (3) http://onsemi.com (2) (1) Q1 Q2 (4) (5) (6) • Pb−Free Package is Available 6 DIAGRAM MARKING SOT−363 CASE 419B STYLE 1 MAXIMUM RATINGS Rating Collector −E.

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BC846BDW1T1, BC847BDW1T1, BC848CDW1T1 Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. • Device Marking: BC846BDW1T1 = 1B BC847BDW1T1 = 1F BC848CDW1T1 = 1L Features (3) http://onsemi.com (2) (1) Q1 Q2 (4) (5) (6) • Pb−Free Package is Available 6 DIAGRAM MARKING SOT−363 CASE 419B STYLE 1 MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC BC846 65 80 6.0 100 BC847 45 50 6.0 100 BC848 30 30 5.0 100 Unit V V V mAdc 1xm 1 1x = Specific Device Code x = B, F, L m = Date Code Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ORDERING INFORMATION Device BC846BDW1T1 BC847BDW1T1 Package SOT−363 SOT−363 SOT−363 (Pb−Free) SOT−363 Shipping† 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Per Device FR−5 Board (Note 1) TA = 25°C Derate Above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range 1. FR−5 = 1.0 x 0.75 x 0.062 in Symbol PD Max 380 250 Unit mW BC847BDW1T1G BC848CDW1T1 3.0 RqJA TJ, Tstg 328 −55 to +150 mW/°C °C/W °C †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2004 1 June, 2004 − Rev. 3 Publication Order Number: BC846BDW1T1/D BC846BDW1T1, BC847BDW1T1, BC848CDW1T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mA) V(BR)CEO BC846 BC847 BC848 V(BR)CES BC846 BC847 BC848 V(BR)CBO BC846 BC847 BC848 V(BR)EBO BC846 BC847 BC848 ICBO 6.0 6.0 5.0 − − − − − − − − − − 15 5.0 nA mA 80 50 30 − − − − − − V 80 50 30 − − − − − − V 65 45 30 − − − − − − V V Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage (IC = 10 mA, VEB = 0) Collector −Base Breakdown Voltage (IC = 10 mA) Emitter −Base Breakdown Voltage (IE = 1.0 mA) Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) ON CHARACTERISTICS DC Current Gain (IC = 10 mA, VCE = 5.0 V) hFE BC846B, BC847B BC848C BC846B, BC847B BC848C VCE(sat) VBE(sat) VBE(on) − − 200 420 − − − − 580 − 150 270 290 520 − − 0.7 0.9 660 − − − 450 800 0.25 0.6 − − 700 770 − (IC = 2.0 mA, VCE = 5.0 V) Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5.


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