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BC846S

Infineon Technologies AG

NPN Silicon AF Transistor

NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitt...


Infineon Technologies AG

BC846S

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Description
NPN Silicon AF Transistor Arrays For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated transistors with good matching in one package BC846S / U, BC847S: For orientation in reel see package information below Pb-free (RoHS compliant) package Qualified according AEC Q101 BC846S/ BC846U/ BC847S BC846S BC846U BC847S C1 B2 E2 654 TR2 TR1 123 E1 B1 C2 EHA07178 Type BC846S BC846U BC847S Marking Pin Configuration Package 1Ds 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 1Ds 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 1Cs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 1 2012-04-04 BC846S/ BC846U/ BC847S Maximum Ratings Parameter Collector-emitter voltage BC846S/U BC847S Symbol VCEO Value 65 45 Collector-base voltage BC846S/U BC847S VCBO 80 50 Emitter-base voltage Collector current Peak collector current, tp ≤ 10 ms Total power dissipationTS ≤ 115 °C, BC846S, BC847S TS ≤ 118 °C, BC846U Junct...




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