BC817W, BC818W
NPN Silicon AF Transistors
For general AF applications High collector current High current gain L...
BC817W, BC818W
NPN Silicon AF
Transistors
For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807W, BC808W (
PNP)
3
2 1
VSO05561
Type BC817-16W BC817-25W BC817-40W BC818-16W BC818-25W BC818-40W
Maximum Ratings Parameter
Marking 6As 6Bs 6Cs 6Es 6Fs 6Gs 1=B 1=B 1=B 1=B 1=B 1=B
Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C
Package SOT323 SOT323 SOT323 SOT323 SOT323 SOT323
Symbol VCEO VCBO VEBO
BC817W 45 50 5 500 1 100 200 250 150
BC818W 25 30 5
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage
DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 130 °C Junction temperature Storage temperature
IC ICM IB IBM Ptot Tj Tstg
mA A mA mW °C
-65 ... 150
Thermal Resistance Junction - soldering point1) RthJS
80
K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
1
Nov-29-2001
BC817W, BC818W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 25 V, IE = 0 Collector cutoff current VCB = 25 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 100 mA, VCE = 1 V h FE-grp.1...
