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BC818-16W Dataheets PDF



Part Number BC818-16W
Manufacturers NXP
Logo NXP
Description NPN general purpose transistor
Datasheet BC818-16W DatasheetBC818-16W Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BC817W NPN general purpose transistor Product specification Supersedes data of 1997 Mar 05 1999 Apr 15 Philips Semiconductors Product specification NPN general purpose transistor FEATURES • High current (max. 500 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT323 plastic package. PNP complement: BC807W. MARKING TYPE NUMBER BC817W BC817-16W BC817-25W BC817-40.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BC817W NPN general purpose transistor Product specification Supersedes data of 1997 Mar 05 1999 Apr 15 Philips Semiconductors Product specification NPN general purpose transistor FEATURES • High current (max. 500 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT323 plastic package. PNP complement: BC807W. MARKING TYPE NUMBER BC817W BC817-16W BC817-25W BC817-40W Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 MARKING CODE(1) 6D∗ 6A∗ 6B∗ 6C∗ TYPE NUMBER BC818W BC818-16W BC818-25W BC818-40W MARKING CODE(1) 6H∗ 6E∗ 6F∗ 6G∗ 1 Top view 2 MAM062 BC817W PINNING PIN 1 2 3 base emitter collector DESCRIPTION handbook, halfpage 3 3 1 2 Simplified outline (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base; IC = 10 mA open collector − − − − − − − −65 − −65 MIN. MAX. 50 45 5 500 1 200 200 +150 150 +150 V V V mA A mA mW °C °C °C UNIT 1999 Apr 15 2 Philips Semiconductors Product specification NPN general purpose transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain BC817W BC817-16W BC817-25W BC817-40W DC current gain VCEsat VBE Cc fT Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. collector-emitter saturation voltage base-emitter voltage collector capacitance transition frequency IC = 500 mA; VCE = 1 V; note 1 IC = 500 mA; IB = 50 mA; note 1 IC = 500 mA; VCE = 1 V; note 1 IE = ie = 0; VCB = 10 V; f = 1 MHz IC = 10 mA; VCE = 5 V; f = 100 MHz CONDITIONS IE = 0; VCB = 20 V IE = 0; VCB = 20 V; Tj = 150 °C IC = 0; VEB = 5 V IC = 100 mA; VCE = 1 V; note 1; see Figs 2, 3 and 4 − − − 100 100 160 250 40 − − − 100 MIN. 5 100 600 250 400 600 − 700 1.2 5 − PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 625 BC817W UNIT K/W MAX. 100 UNIT nA µA nA mV mV pF MHz 1999 Apr 15 3 Philips Semiconductors Product specification NPN general purpose transistor BC817W handbook, full pagewidth 20 MBH721 hFE 160 VCE = 1 V 120 80 40 0 10−1 1 10 102 IC (mA) 103 BC817-16W. Fig.2 DC current gain; typical values. handbook, full pagewidth 500 MBH720 hFE 400 VCE = 1 V 300 200 100 0 10−1 BC817-25W. 1 10 102 IC (mA) 103 Fig.3 DC current gain; typical values. 1999 Apr 15 4 Philips Semiconductors Product specification NPN general purpose transistor BC817W handbook, full pagewidth 500 MBH722 hFE 400 VCE = 1 V 300 200 100 0 10−1 1 10 102 IC (mA) 103 BC817-40W. Fig.4 DC current gain; typical values. 1999 Apr 15 5 Philips Semiconductors Product specification NPN general purpose transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads BC817W SOT323 D B E A X y HE v M A 3 Q A A1 c 1 e1 e bp 2 w M B Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 OUTLINE VERSION SOT323 REFERENCES IEC JEDEC EIAJ SC-70 EUROPEAN PROJECTION ISSUE DATE 97-02-28 1999 Apr 15 6 Philips Semiconductors Product specification NPN general purpose transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BC817W This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for u.


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