BC817-25

BC817, BC818 NPN Silicon AF Transistors 3
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary types: BC807, BC808 (PNP) 2 1 VPS05161 Type BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40 Maximum Ratings Parameter Marking 6As 6Bs 6Cs 6Es 6Fs 6Gs 1=B 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C Package SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 Symbol VCEO VCBO VEBO BC817 45 50 5 500 1 100 200 330 150 BC818 25 30 5 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 79 °C Junction temperature Storage temperature IC ICM IB IBM Ptot Tj Tstg mA A mA mW °C -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS
215 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-29-2001 BC817, BC818 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 25 V, IE = 0 Collector cutoff current VCB = 25 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 100 mA, VCE = 1 V hFE-grp.16 hFE-grp.25 hFE-grp...