BC808-25

PNP Silicon AF Transistors BC 807 BC 808 q q q q q For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817, BC 818 (NPN) Type BC 807-16 BC 807-25 BC 807-40 BC 808-16 BC 808-25 BC 808-40 Marking 5As 5Bs 5Cs 5Es 5Fs 5Gs Ordering Code Q62702-C1735 Q62702-C1689 Q62702-C1721 Q62702-C1736 Q62702-C1504 Q62702-C1692 Pin Configuration 1 2 3 B E C Package1) SOT-23 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 5.91 BC 807 BC 808 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol BC 807 VCE0 VCB0 VEB0 IC ICM IB IBM Tj Tstg 45 50 5 Values BC 808 25 30 5 500 1 100 200 330 150 – 65 … + 150 Unit V mA A mA mW ˚C Total power dissipation, TC = 79 ˚C Ptot 285 215 K/W 1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BC 807 BC 808 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 807 BC 808 Collector-base breakdown voltage IC = 100 µA BC 807 BC 808 Emitter-base breakdown voltage, IE = 10 µA Collector cutoff current VCB = 25 V VCB = 25 V, TA = 150 ˚C Emitter c...