Document
BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
Rev. 06 — 17 November 2009
Product data sheet
1. Product profile
1.1 General description
PNP general-purpose transistors.
Table 1. Product overview
Type number
Package
NXP
BC807
SOT23
BC807W
SOT323
BC327[1]
SOT54 (TO-92)
JEITA SC-70 SC-43A
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).
NPN complement
BC817 BC817W BC337
1.2 Features
High current Low voltage
1.3 Applications
General-purpose switching and amplification
1.4 Quick reference data
Table 2. Symbol VCEO
IC ICM hFE
Quick reference data
Parameter
Conditions
collector-emitter voltage collector current (DC)
open base; IC = 10 mA
peak collector current
DC current gain BC807; BC807W; BC327
IC = −100 mA; VCE = −1 V
BC807-16; BC807-16W; BC327-16
BC807-25; BC807-25W; BC327-25
BC807-40; BC807-40W; BC327-40
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Min Typ Max Unit - - −45 V
- - −500 mA - - −1 A
[1]
100 100 160 250 -
600 250 400 600
NXP Semiconductors
2. Pinning information
Table 3. Pin SOT23 1 2 3
Pinning Description
base emitter collector
SOT323 1 2 3
base emitter collector
SOT54 1 2 3
emitter base collector
SOT54A 1 2 3
emitter base collector
SOT54 variant 1 emitter 2 base 3 collector
BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
Simplified outline Symbol
3 12
3
1 2
sym013
3
12
sot323_so
3
1 2
sym013
1 2 3
001aab347
3
2 1
006aaa149
1 2
3
001aab348
3
2 1
006aaa149
1 2 3
001aab447
3
2 1
006aaa149
BC807_BC807W_BC327_6
Product data sheet
Rev. 06 — 17 November 2009
© NXP B.V. 2009. All rights reserved.
2 of 19
NXP Semiconductors
BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
3. Ordering information
4. Marking
Table 4. Ordering information
Type number[1] Package
Name Description
Version
BC807
- plastic surface mounted package; 3 leads
SOT23
BC807W
SC-70 plastic surface mounted package; 3 leads
SOT323
BC327[2]
SC-43A plastic single-ended leaded (through hole) package; SOT54 3 leads
[1] Valid for all available selection groups. [2] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).
Table 5. Marking codes Type number BC807 BC807-16 BC807-25 BC807-40 BC807W BC807-16W BC807-25W BC807-40W BC327 BC327-16 BC327-25 BC327-40
[1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
Marking code[1] 5D* 5A* 5B* 5C* 5D* 5A* 5B* 5C* C327 C32716 C32725 C32740
BC807_BC807W_BC327_6
Product data sheet
Rev. 06 — 17 November 2009
© NXP B.V. 2009. All rights reserved.
3 of 19
NXP Semiconductors
BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
5. Limiting values
Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO VCEO
VEBO IC ICM IBM Ptot
Tstg Tj Tamb
collector-base voltage collector-emitter voltage
emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation
BC807 BC807W BC327 storage temperature junction temperature ambient temperature
open emitter open base; IC = 10 mA open collector
Tamb ≤ 25 °C Tamb ≤ 25 °C Tamb ≤ 25 °C
-
-
[1][2] [1][2] [1][2] -
−65 −65
Max Unit −50 V −45 V
−5 −500 −1 −200
V mA A mA
250 200 625 +150 150 +150
mW mW mW °C °C °C
[1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. [2] Valid for all available selection groups.
6. Thermal characteristics
Table 7. Symbol Rth(j-a)
Thermal characteristics Parameter thermal resistance from junction to ambient
BC807 BC807W BC327
Conditions
Tamb ≤ 25 °C Tamb ≤ 25 °C Tamb ≤ 25 °C
Min Typ Max Unit
[1][2] - - 500 K/W [1][2] - - 625 K/W [1][2] - - 200 K/W
[1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. [2] Valid for all available selection groups.
BC807_BC807W_BC327_6
Product data sheet
Rev. 06 — 17 November 2009
© NXP B.V. 2009. All rights reserved.
4 of 19
NXP Semiconductors
BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
7. Characteristics
Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter
ICBO collector-base cut-off current
IEBO hFE
hFE VCEsat VBE Cc fT
emitter-base cut-off current DC current gain
BC807; BC807W; BC327 BC807-16; BC807-16W; BC327-16 BC807-25; BC807-25W; BC327-25 BC807-40; BC807-40W; BC327-40 DC current gain collector-emitter saturation voltage base-emitter voltage collector capacitance
transition frequency
Conditions IE = 0 A; VCB = −20 V IE = 0 A; VCB = −20 V; Tj = 150 °C IC = 0 A; VEB = −5 V IC = −100 mA; VCE = −1 V
IC = −500 mA; VCE = −1 V IC = −500 mA; IB = −50 mA
IC = −500 mA; VCE = −1 V IE = ie = 0 A; VCB = −10 V; f = 1 MHz IC = −10 mA; VCE = −5 V; f = 100 MHz
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. [2] VBE decreases by approximately 2 mV/K with increasing temperature.
Min .