BC640

BC636, BC636-16, BC638, BC640, BC640-16 High Current Transistors PNP Silicon http://onsemi.com MAXIMUM RATINGS Rating Collector-Emitter Voltage BC636 BC638 BC640 Collector-Base Voltage BC636 BC638 BC640 Emitter-Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range VEBO IC PD 625 5.0 PD 1.5 12 TJ, Tstg –55 to +150 Watts mW/°C °C mW mW/°C 1 VCBO –45 –60 –80 –5.0 –0.5 Vdc Adc Symbol VCEO –45 –60 –80 Vdc Value Unit Vdc 3 BASE COLLECTOR 2 1 EMITTER www.DataSheet4U.com 2 3 CASE 29 TO–92 STYLE 14 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RθJA RθJC Max 200 83.3 Unit °C/W ORDERING INFORMATION °C/W Device BC636 BC636ZL1 BC636–16ZL1 BC638 BC638ZL1 BC640 BC640ZL1 BC640–16 Package TO–92 TO–92 TO–92 TO–92 TO–92 TO–92 TO–92 TO–92 Shipping 5000 Units/Box 2000/Ammo Pack 2000/Ammo Pack 5000 Units/Box 2000/Ammo Pack 5000 Units/Box 2000/Ammo Pack 5000 Units/Box © Semiconductor Components Industries, LLC, 2001 1 June, 2000 – Rev. 1 Publication Order Number: BC636/D BC636, BC636–16, BC638, BC640, BC640–16 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –10 mAdc, IB = 0) V(BR)CEO BC636 BC638 BC640 V(BR)CBO BC636 BC638 BC640 V(BR)EBO ICBO — — — —...