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BC640 Dataheets PDF



Part Number BC640
Manufacturers NXP
Logo NXP
Description PNP medium power transistors
Datasheet BC640 DatasheetBC640 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors Product specification Supersedes data of 1997 Mar 07 1999 Apr 23 Philips Semiconductors Product specification PNP medium power transistors FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Audio and video amplifiers. DESCRIPTION PNP medium power transistor in a TO-92; SOT54 plastic package. NP complements: BC635, BC637 and BC639. 1 handbook, halfpage BC636; BC.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors Product specification Supersedes data of 1997 Mar 07 1999 Apr 23 Philips Semiconductors Product specification PNP medium power transistors FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Audio and video amplifiers. DESCRIPTION PNP medium power transistor in a TO-92; SOT54 plastic package. NP complements: BC635, BC637 and BC639. 1 handbook, halfpage BC636; BC638; BC640 PINNING PIN 1 2 3 base collector emitter DESCRIPTION 2 3 2 1 3 MAM285 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BC636 BC638 BC640 VCEO collector-emitter voltage BC636 BC638 BC640 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − − − − − − − − −65 − −65 −45 −60 −80 −5 −1 −1.5 −200 0.83 +150 150 +150 V V V V A A mA W °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − − −45 −60 −100 V V V MIN. MAX. UNIT 1999 Apr 23 2 Philips Semiconductors Product specification PNP medium power transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = −30 V PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 BC636; BC638; BC640 VALUE 150 UNIT K/W MIN. − − − 40 63 25 63 100 MAX. −100 −10 −100 − 250 − 160 250 −0.5 −1 − 1.6 UNIT nA µA nA IE = 0; VCB = −30 V; Tj = 150 °C IC = 0; VEB = −5 V VCE = −2 V; see Fig.2 IC = −5 mA IC = −150 mA IC = −500 mA DC current gain BC636-10 BC636-16; BC638-16; BC640-16 VCEsat VBE fT h FE1 ----------h FE2 collector-emitter saturation voltage base-emitter voltage transition frequency DC current gain ratio of the complementary pairs IC = −500 mA; IB = −50 mA IC = −500 mA; VCE = −2 V IC = 150 mA; VCE = 2 V IC = −150 mA; VCE = −2 V; see Fig.2 − − − V V MHz IC = −50 mA; VCE = −5 V; f = 100 MHz 100 1999 Apr 23 3 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640 handbook, full pagewidth 160 MBH730 hFE 120 VCE = −2 V 80 40 0 −10−1 −1 −10 −102 −103 IC (mA) −104 Fig.2 DC current gain; typical values. 1999 Apr 23 4 Philips Semiconductors Product specification PNP medium power transistors PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads BC636; BC638; BC640 SOT54 c E d A L b 1 D 2 e1 e 3 b1 L1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-02-28 1999 Apr 23 5 Philips Semiconductors Product specification PNP medium power transistors DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BC636; BC638; BC640 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 23 6 Philips Semiconductors Product specification PNP medium power transistors NOTES BC636; BC638; BC640 1999 Apr 23 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4.


BC639 BC640 BC640


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