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BC639 Dataheets PDF



Part Number BC639
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description NPN EPITAXIAL SILICON TRANSISTOR
Datasheet BC639 DatasheetBC639 Datasheet (PDF)

BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter VCER Collector-Emitter Voltage at RBE=1KΩ : BC635 : BC637 : BC639 VCES Collector-Emitter Voltage : BC635 : BC637 : BC639 VCEO Collector-Emitter Voltage : BC635 : BC637 : BC639 VEBO Emitter-Base Voltage IC Collector Current ICP Peak Collector Current IB Base Current PC Collector Pow.

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BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter VCER Collector-Emitter Voltage at RBE=1KΩ : BC635 : BC637 : BC639 VCES Collector-Emitter Voltage : BC635 : BC637 : BC639 VCEO Collector-Emitter Voltage : BC635 : BC637 : BC639 VEBO Emitter-Base Voltage IC Collector Current ICP Peak Collector Current IB Base Current PC Collector Power Dissipation TJ Junction Temperature TSTG Storage Temperature • PW=5ms, Duty Cycle=10% Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition BVCEO Collector-Emitter Breakdown Voltage : BC635 : BC637 : BC639 IC=10mA, IB=0 ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(on) fT Collector Cut-off Current Emitter Cut-off Current DC Current Gain : All : BC635 : BC637/BC639 : All Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product VCB=30V, IE=0 VEB=5V, IC=0 VCE=2V, IC=5mA VCE=2V, IC=150mA VCE=2V, IC=500mA IC=500mA, IB=50mA VCE=2V, IC=500mA VCE=5V, IC=10mA, f=50MHz ©2002 Fairchild Semiconductor Corporation 1 TO-92 1. Emitter 2. Collector 3. Base Value 45 60 100 45 60 100 45 60 80 5 1 1.5 100 1 150 -65 ~ 150 Units V V V V V V V V V V A A mA W °C °C Min. 45 60 80 25 40 40 25 Typ. 100 Max. Units V V V 0.1 µA 0.1 µA 250 160 0.5 V 1V MHz Rev. B2, December 2002 BC635/637/639 Typical Characteristics IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 200 160 120 80 40 0 0 IB = 1.8 mA IB = 1.6 mA IB = 1.4 mA IB = 1.2 mA IB = 1.0 mA IB = 0.8 mA IB = 0.6 mA IB = 0.4 mA IB = 0.2 mA 10 20 30 40 50 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic 10 1 VBE(sat) IC = 10 IB 0.1 VCE(sat) 0.01 1 10 100 IC[mA], COLLECTOR CURRENT 1000 Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 f=1MHz 10 IC[mA], COLLECTOR CURRENT hFE, DC CURRENT GAIN 1000 100 VCE = 2V 10 1 10 100 IC[mA], COLLECTOR CURRENT Figure 2. DC current Gain 1000 1000 100 VCE = 2V 10 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VBE[V], BASE-EMITTER VOLTAGE Figure 4. Base-Emitter On Voltage Cob[pF], CAPACITANCE 1 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance ©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002 BC635/637/639 Package Dimensions TO-92 ©2002 Fairchild Semiconductor Corporation Dimensions in Millimeters Rev. B2, December 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ Bottomless™ FACT Quiet series™ FAST® CoolFET™ FASTr™ CROSSVOLT™ FRFET™ DOME™ GlobalOptoisolator™ EcoSPARK™ E2CMOS™ EnSigna™ GTO™ HiSeC™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Product Status Formative or In Design First Production Full Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the r.


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