Document
BC635/637/639
BC635/637/639
Switching and Amplifier Applications
• Complement to BC636/638/640
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCER
Collector-Emitter Voltage at RBE=1KΩ : BC635
: BC637
: BC639
VCES
Collector-Emitter Voltage : BC635 : BC637 : BC639
VCEO
Collector-Emitter Voltage : BC635 : BC637 : BC639
VEBO
Emitter-Base Voltage
IC Collector Current
ICP Peak Collector Current
IB Base Current
PC Collector Power Dissipation
TJ Junction Temperature
TSTG
Storage Temperature
• PW=5ms, Duty Cycle=10%
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
Collector-Emitter Breakdown Voltage : BC635 : BC637 : BC639
IC=10mA, IB=0
ICBO IEBO hFE1 hFE2
hFE3 VCE(sat) VBE(on) fT
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
: All : BC635 : BC637/BC639 : All
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
VCB=30V, IE=0 VEB=5V, IC=0 VCE=2V, IC=5mA VCE=2V, IC=150mA
VCE=2V, IC=500mA IC=500mA, IB=50mA VCE=2V, IC=500mA VCE=5V, IC=10mA, f=50MHz
©2002 Fairchild Semiconductor Corporation
1 TO-92 1. Emitter 2. Collector 3. Base
Value
45 60 100
45 60 100
45 60 80
5 1 1.5 100 1 150 -65 ~ 150
Units
V V V
V V V
V V V V A A mA W °C °C
Min.
45 60 80
25 40 40 25
Typ. 100
Max. Units
V V V 0.1 µA 0.1 µA
250 160
0.5 V 1V
MHz
Rev. B2, December 2002
BC635/637/639
Typical Characteristics
IC[mA], COLLECTOR CURRENT
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
200 160 120
80 40
0 0
IB = 1.8 mA IB = 1.6 mA IB = 1.4 mA IB = 1.2 mA IB = 1.0 mA IB = 0.8 mA IB = 0.6 mA IB = 0.4 mA IB = 0.2 mA
10 20 30 40 50
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
10 1 VBE(sat)
IC = 10 IB
0.1 VCE(sat)
0.01 1
10 100
IC[mA], COLLECTOR CURRENT
1000
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
100
f=1MHz
10
IC[mA], COLLECTOR CURRENT
hFE, DC CURRENT GAIN
1000 100
VCE = 2V
10 1
10 100
IC[mA], COLLECTOR CURRENT
Figure 2. DC current Gain
1000
1000 100
VCE = 2V
10
1 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VBE[V], BASE-EMITTER VOLTAGE
Figure 4. Base-Emitter On Voltage
Cob[pF], CAPACITANCE
1 1 10 100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
©2002 Fairchild Semiconductor Corporation
Rev. B2, December 2002
BC635/637/639
Package Dimensions
TO-92
©2002 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. B2, December 2002
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Datasheet Identification Advance Information Preliminary
No Identification Needed
Product Status Formative or In Design First Production
Full Production
Definition
This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the r.