BC637

BC635/637/639 BC635/637/639 Switching and Amplifier Applications Complement to BC636/638/640 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter VCER Collector-Emitter Voltage at RBE=1KΩ : BC635 : BC637 : BC639 VCES Collector-Emitter Voltage : BC635 : BC637 : BC639 VCEO Collector-Emitter Voltage : BC635 : BC637 : BC639 VEBO Emitter-Base Voltage IC Collector Current ICP Peak Collector Current IB Base Current PC Collector Power Dissipation TJ Junction Temperature TSTG Storage Temperature PW=5ms, Duty Cycle=10% Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition BVCEO Collector-Emitter Breakdown Voltage : BC635 : BC637 : BC639 IC=10mA, IB=0 ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(on) fT Collector Cut-off Current Emitter Cut-off Current DC Current Gain : All : BC635 : BC637/BC639 : All Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product VCB=30V, IE=0 VEB=5V, IC=0 VCE=2V, IC=5mA VCE=2V, IC=150mA VCE=2V, IC=500mA IC=500mA, IB=50mA VCE=2V, IC=500mA VCE=5V, IC=10mA, f=50MHz ©2002 Fairchild Semiconductor Corporation 1 TO-92 1. Emitter 2. Collector 3. Base Value 45 60 100 45 60 100 45 60 80 5 1 1.5 100 1 150 -65 ~ 150 Units V V V V V V V V V V A A mA W °C °C Min. 45 60 80 25 40 40 25 Typ. 100 Max. Units V V V 0.1 µA 0.1 µA 250 160 0.5 V 1V MHz Rev. B2, December 2002 BC635/637/639 Typical Characteristics IC[...