BC635/637/639
BC635/637/639
Switching and Amplifier Applications
• Complement to BC636/638/640
NPN Epitaxial Silicon T...
BC635/637/639
BC635/637/639
Switching and Amplifier Applications
Complement to BC636/638/640
NPN Epitaxial Silicon
Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCER
Collector-Emitter Voltage at RBE=1KΩ : BC635
: BC637
: BC639
VCES
Collector-Emitter Voltage : BC635 : BC637 : BC639
VCEO
Collector-Emitter Voltage : BC635 : BC637 : BC639
VEBO
Emitter-Base Voltage
IC Collector Current
ICP Peak Collector Current
IB Base Current
PC Collector Power Dissipation
TJ Junction Temperature
TSTG
Storage Temperature
PW=5ms, Duty Cycle=10%
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
Collector-Emitter Breakdown Voltage : BC635 : BC637 : BC639
IC=10mA, IB=0
ICBO IEBO hFE1 hFE2
hFE3 VCE(sat) VBE(on) fT
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
: All : BC635 : BC637/BC639 : All
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
VCB=30V, IE=0 VEB=5V, IC=0 VCE=2V, IC=5mA VCE=2V, IC=150mA
VCE=2V, IC=500mA IC=500mA, IB=50mA VCE=2V, IC=500mA VCE=5V, IC=10mA, f=50MHz
©2002 Fairchild Semiconductor Corporation
1 TO-92 1. Emitter 2. Collector 3. Base
Value
45 60 100
45 60 100
45 60 80
5 1 1.5 100 1 150 -65 ~ 150
Units
V V V
V V V
V V V V A A mA W °C °C
Min.
45 60 80
25 40 40 25
Typ. 100
Max. Units
V V V 0.1 µA 0.1 µA
250 160
0.5 V 1V
MHz
Rev. B2, December 2002
BC635/637/639
Typical Characteristics
IC[...