BC635

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors Product specification Supersedes data of 1997 Mar 12 1999 Apr 23 Philips Semiconductors Product specification NPN medium power transistors FEATURES High current (max. 1 A) Low voltage (max. 80 V). APPLICATIONS Driver stages of audio/video amplifiers. DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC636, BC638 and BC640. PINNING PIN 1 2 3 BC635; BC637; BC639 DESCRIPTION base collector emitter 1 handbook, halfpage 2 3 2 1 3 MAM259 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BC635 BC637 BC639 VCEO collector-emitter voltage BC635 BC637 BC639 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C open collector open base − − − − − − − − −65 − −65 45 60 80 5 1 1.5 200 0.83 +150 150 +150 V V V V A A mA W °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − − 45 60 100 V V V MIN. MAX. UNIT 1999 Apr 23 2 Philips Semiconductors Product specification NPN medium power transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEB...