BC618

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC618/D Darlington Transistors NPN Silicon COLLECTOR 1 BASE 2 BC618 EMITTER 3 1 2 3 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 55 80 12 1.0 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc Adc mW mW/°C Watts mW/°C °C CASE 29–04, STYLE 17 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 10 mAdc, VBE = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, VBE = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICES ICBO IEBO 55 80 12 — — — — — — — — — — — — 50 50 50 Vdc Vdc Vdc nAdc nAdc nAdc Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 BC618 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Char...