BC557C

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors Order this document by BC556/D PNP Silicon COLLECTOR 1 2 BASE 3 EMITTER BC556,B BC557A,B,C BC558B MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC 556 –65 –80 BC 557 –45 –50 –5.0 –100 625 5.0 1.5 12 – 55 to +150 BC 558 –30 –30 Unit Vdc Vdc Vdc mAdc mW mW/°C Watt mW/°C °C 1 2 3 CASE 29–04, STYLE 17 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0) V(BR)CEO BC556 BC557 BC558 V(BR)CBO BC556 BC557 BC558 V(BR)EBO BC556 BC557 BC558 ICES BC556 BC557 BC558 BC556 BC557 BC558 — — — — — — –2.0 –2.0 –2.0 — — — –100 –100 –100 –4.0 –4.0 –4.0 nA –5.0 –5.0 –5.0 — — — — — — –80 –50 –30 — — — — — — V –65 –45 –30 — — — — — — V V Collector – Base Breakdown Voltage (IC = –100 µAdc) Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) Collector–Emitter Leakage Current (VCES = –40 V) (VCES = –20 V) (VCES = –20 V, TA = 125°C) µA Motorola...