BC548A

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC546/D Amplifier Transistors NPN Silicon COLLECTOR 1 BC546, B BC547, A, B, C BC548, A, B, C 2 BASE 3 EMITTER MAXIMUM RATINGS Rating BC BC BC Symbol 546 547 548 Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD 65 45 30 Vdc 80 50 30 Vdc 6.0 Vdc 100 mAdc 625 mW 5.0 mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 Watt 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0) BC546 BC547 BC548 V(BR)CEO Collector – Base Breakdown Voltage (IC = 100 µAdc) BC546 BC547 BC548 V(BR)CBO Emitter – Base Breakdown Voltage (IE = 10 mA, IC = 0) BC546 BC547 BC548 V(BR)EBO Collector Cutoff Current (VCE = 70 V, VBE = 0) (VCE = 50 V, VBE = 0) (VCE = 35 V, VBE = 0) (VCE = 30 V, TA = 125°C) BC546 BC547 BC548 BC546/547/548 ICES Min 65 45 30 80 50 30 6.0 6.0 6.0 — — — — 1 2 3 CASE 29–04, STYLE 17 TO–92 (TO–226AA) Typ Max Unit —— V —— —— —— V —— —— —— V —— —— 0.2 15 nA 0.2 15 0.2 15 — 4.0 µA REV...