DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC517 NPN Darlington transistor
Product specification Supersede...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC517
NPN Darlington
transistor
Product specification Supersedes data of 1997 Apr 23
1999 Apr 23
Philips Semiconductors
NPN Darlington
transistor
Product specification
BC517
FEATURES High current (max. 500 mA) Low voltage (max. 30 V) Very high DC current gain (min. 30000).
APPLICATIONS Where very high amplification is required.
DESCRIPTION
NPN Darlington
transistor in a TO-92; SOT54 plastic package.
PNP complement: BC516.
PINNING
PIN 1 2 3
emitter base collector
DESCRIPTION
handbook, halfpage
1 2 3
23
TR1 TR2
1
MAM302
Fig.1 Simplified outline (TO-92; SOT54) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO VCES VEBO IC ICM IB Ptot Tstg Tj Tamb
PARAMETER
collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature
CONDITIONS open emitter VBE = 0 open collector
Tamb ≤ 25 °C; note 1
Note 1.
Transistor mounted on an FR4 printed-circuit board.
MIN.
− − − − − − − −65 − −65
MAX.
40 30 10 500 800 100 500 +150 150 +150
UNIT
V V V mA mA mA mW °C °C °C
1999 Apr 23
2
Philips Semiconductors
NPN Darlington
transistor
Product specification
BC517
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1.
Transistor mounted on an FR4 printed-...