BC516

BC516 BC516 PNP Darlington Transistor This device is designed for applications reguiring extremely high current gain at currents to 1mA. Sourced from process 61. Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VCEO VCBO VEBO IC PD TJ, TSTG Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Power Dissipation TA = 25°C Operating and Storage Junction Temperature Range 1 TO-92 1. Collector 2. Base 3. Emitter Value 30 40 10 1 625 -55 ~ +150 Units V V V A mW °C Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units VCEO VCBO VEBO ICBO hFE Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current DC Current Gain IC = 2mA, IB = 0 IC = 100µA, IE = 0 IE = 10µA, IC = 0 VCB = 30V, IE = 0 IC = 20mA, VCE = 2V 30 40 10 30,00 0 V V V 100 nA VCE(sat) VBE(on) fT Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product (2) IC = 100mA, IB = 0.1mA IC = 10mA, VCE = 5V IC = 10mA, VCE = 5V, f = 100MHz 1V 1.4 V 200 MHZ NOTES: 1. Pulse Test Pulse Width ≤ 2% 2. fT = IhfeI · ftest Thermal Characteristics TA=25°C unless otherwise noted Symbol Parameter RθJA RθJC Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Max. 200 83.3 Units °C/W °C/W ©2002 Fairchild Semiconductor Corporation Rev. A1, August 200...