Document
BC489, BC489A
High Current Transistors
NPN Silicon
Features
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage Collector −Base Voltage Collector −Emitter Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Operating and Storage Junction Temperature Range
VCEO VCBO VEBO
IC PD
80 Vdc
80 Vdc
5.0 Vdc
0.5 Adc
625 mW 5.0 mW/°C
PD 1.5 W 12 mW/°C
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
200 °C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR 1
2 BASE
3 EMITTER
TO−92 CASE 29 STYLE 17
123 STRAIGHT LEAD
BULK PACK
1 2 3
BENT LEAD TAPE & REEL AMMO PACK
MARKING DIAGRAM
BC 489x AYWW G
G
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 3
1
489x = 489A A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
BC489G
TO−92
5000 Units / Bulk
(Pb−Free)
BC489RL1G
TO−92 2000 / Tape & Reel (Pb−Free)
BC489AG
TO−92
5000 Units / Bulk
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Publication Order Number: BC489/D
BC489, BC489A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 1) (IC = 10 mAdc, IB = 0)
Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0)
Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
Collector Cutoff Current (VCB = 60 V, IE = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mAdc, VCE = 2.0 Vdc) (IC = 100 mAdc, VCE = 2.0 Vdc)
BC489 BC489A
Symbol V(BR)CEO V(BR)CBO V(BR)EBO
ICBO
hFE
(IC = 1.0 Adc, VCE = 5.0 Vdc)
Collector −Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc)
Collector −Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) (Note 1)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
VCE(sat) VBE(sat)
fT Cob Cib
Min
80 80 5.0
−
40 60 100 15 − − − −
− − −
Typ
− − −
−
− − 160 − 0.2 0.3 0.85 0.9
200 7.0 50
Max Unit
Vdc −
Vdc − − Vdc
nAdc 100
− − 400 250 −
Vdc 0.5 −
Vdc 1.2 −
− MHz
− pF
− pF
TURN−ON TIME
5.0 ms
−1.0 V
+10 V 0
tr = 3.0 ns
Vin 5.0 mF
100 RB
100
VCC +40 V RL OUTPUT
*CS < 6.0 pF
TURN−OFF TIME
+VBB
100 Vin RB
VCC +40 V
RL OUTPUT
5.0 mF 100
*CS < 6.0 pF
5.0 ms tr = 3.0 ns
*Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
http://onsemi.com 2
fT, CURRENT−GAIN Ċ BANDWIDTH PRODUCT (MHz)
BC489, BC489A
300
VCE = 2.0 V 200 TJ = 25°C
100 70 50
30 2.0 3.0
5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
200
Figure 2. Current−Gain — Bandwidth Product
C, CAPACITANCE (pF)
80 60 TJ = 25°C 40 Cibo
20
10 8.0 6.0
4.0 0.1 0.2
0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance
Cobo 50 100
t, TIME (ns)
1.0 k
700 500 ts 300
200
100
70 50
30 VCC = 40 V
20
IC/IB = 10 IB1 = IB2
TJ = 25°C 10
5.0 7.0 10
tf
tr td @ VBE(off) = 0.5 V 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA)
Figure 4. Switching Time
500
1.0
0.7 0.5
D = 0.5
0.3 0.2 0.2 0.1
0.1 0.02 0.07 0.01 0.05 SINGLE PULSE
0.03 SINGLE PULSE 0.02
0.01 1.0 2.0
5.0 10
20
ZqJC(t) = r(t) • RqJC ZqJA(t) = r(t) • RqJA
50 100 200
500 1.0 k 2.0 k
t, TIME (ms)
Figure 5. Thermal Response
P(pk)
t1 t2
DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN−469) TJ(pk) − TC = P(pk) ZqJC(t) TJ(pk) − TA = P(pk) ZqJA(t)
5.0 k 10 k 20 k
50 k 100 k
r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED)
http://onsemi.com 3
hFE, DC CURRENT GAIN
IC, COLLECTOR CURRENT (mA)
BC489, BC489A
1.0 k 700 500
300 200
100 70 50
30 20
10 1.0
TA = 25°C
100 ms 1.0 ms 1.0 s TC = 25°C
CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT
BC489
2.0 3.0 5..