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BC489 Dataheets PDF



Part Number BC489
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description High Current Transistors
Datasheet BC489 DatasheetBC489 Datasheet (PDF)

BC489, BC489A High Current Transistors NPN Silicon Features • These are Pb−Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage Collector −Base Voltage Collector −Emitter Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Operating and Storage Junction Temperature Range VCEO VCBO VEBO IC PD 80 Vdc 80 Vdc 5.0 Vdc 0.5 Adc 625 mW 5.0 mW/°C PD 1.5 W 12 mW/°C .

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BC489, BC489A High Current Transistors NPN Silicon Features • These are Pb−Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage Collector −Base Voltage Collector −Emitter Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Operating and Storage Junction Temperature Range VCEO VCBO VEBO IC PD 80 Vdc 80 Vdc 5.0 Vdc 0.5 Adc 625 mW 5.0 mW/°C PD 1.5 W 12 mW/°C TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. http://onsemi.com COLLECTOR 1 2 BASE 3 EMITTER TO−92 CASE 29 STYLE 17 123 STRAIGHT LEAD BULK PACK 1 2 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAM BC 489x AYWW G G *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 March, 2007 − Rev. 3 1 489x = 489A A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† BC489G TO−92 5000 Units / Bulk (Pb−Free) BC489RL1G TO−92 2000 / Tape & Reel (Pb−Free) BC489AG TO−92 5000 Units / Bulk (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BC489/D BC489, BC489A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 1) (IC = 10 mAdc, IB = 0) Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 60 V, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 10 mAdc, VCE = 2.0 Vdc) (IC = 100 mAdc, VCE = 2.0 Vdc) BC489 BC489A Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO hFE (IC = 1.0 Adc, VCE = 5.0 Vdc) Collector −Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) Collector −Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) (Note 1) DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. VCE(sat) VBE(sat) fT Cob Cib Min 80 80 5.0 − 40 60 100 15 − − − − − − − Typ − − − − − − 160 − 0.2 0.3 0.85 0.9 200 7.0 50 Max Unit Vdc − Vdc − − Vdc nAdc 100 − − 400 250 − Vdc 0.5 − Vdc 1.2 − − MHz − pF − pF TURN−ON TIME 5.0 ms −1.0 V +10 V 0 tr = 3.0 ns Vin 5.0 mF 100 RB 100 VCC +40 V RL OUTPUT *CS < 6.0 pF TURN−OFF TIME +VBB 100 Vin RB VCC +40 V RL OUTPUT 5.0 mF 100 *CS < 6.0 pF 5.0 ms tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits http://onsemi.com 2 fT, CURRENT−GAIN Ċ BANDWIDTH PRODUCT (MHz) BC489, BC489A 300 VCE = 2.0 V 200 TJ = 25°C 100 70 50 30 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 Figure 2. Current−Gain — Bandwidth Product C, CAPACITANCE (pF) 80 60 TJ = 25°C 40 Cibo 20 10 8.0 6.0 4.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Capacitance Cobo 50 100 t, TIME (ns) 1.0 k 700 500 ts 300 200 100 70 50 30 VCC = 40 V 20 IC/IB = 10 IB1 = IB2 TJ = 25°C 10 5.0 7.0 10 tf tr td @ VBE(off) = 0.5 V 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 4. Switching Time 500 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.02 0.07 0.01 0.05 SINGLE PULSE 0.03 SINGLE PULSE 0.02 0.01 1.0 2.0 5.0 10 20 ZqJC(t) = r(t) • RqJC ZqJA(t) = r(t) • RqJA 50 100 200 500 1.0 k 2.0 k t, TIME (ms) Figure 5. Thermal Response P(pk) t1 t2 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN−469) TJ(pk) − TC = P(pk) ZqJC(t) TJ(pk) − TA = P(pk) ZqJA(t) 5.0 k 10 k 20 k 50 k 100 k r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) http://onsemi.com 3 hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) BC489, BC489A 1.0 k 700 500 300 200 100 70 50 30 20 10 1.0 TA = 25°C 100 ms 1.0 ms 1.0 s TC = 25°C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT BC489 2.0 3.0 5..


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