BC373

BC372, BC373 High Voltage Darlington Transistors NPN Silicon Features http://onsemi.com COLLECTOR 3 BASE 2 Symbol VCEO BC372 BC373 Collector −Base Voltage BC372 BC373 Emitter−Base Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above TA = 25°C www.DataSheet4U.com Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector −Emitter Voltage Value 100 80 VCES 100 80 VEBO IC PD PD TJ, Tstg 12 1.0 625 5.0 1.5 12 −55 to +150 Vdc Adc mW mW/°C W mW/°C °C 12 3 Vdc Unit Vdc EMITTER 1 MARKING DIAGRAM Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Operating and Storage Junction Temperature Range TO−92 CASE 29 STYLE 1 BC 37x AYWW G G THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W BC37x = Device Code x = 2 or 3 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ORDERING INFORMATION Device BC372 BC372G BC373 BC373G BC373RL1 BC373RL1G BC373ZL1 BC373ZL1G Package TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92...