Document
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
COLLECTOR 2 3 BASE NPN 1 EMITTER 3 BASE PNP 1 EMITTER COLLECTOR 2
Order this document by BC368/D
NPN BC368, -25 PNP BC369
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCES VEBO IC PD PD TJ, Tstg Value 20 25 5.0 1.0 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc Adc mW mW/°C Watt mW/°C °C
Voltage and current are negative for PNP transistors
1 2 3
CASE 29–04, STYLE 14 TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
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Symbol Rq JA Rq JC
Max 200 83.3
Unit °C/W °C/W
Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 10 mA, IB = 0) Collector – Base Breakdown Voltage (IC = 100 µA, IE = 0 ) Emitter – Base Breakdown Voltage (IE = 100 µA, IC = 0) Collector Cutoff Current (VCB = 25 V, IE = 0) (VCB = 25 V, IE = 0, TJ = 150°C) Emitter Cutoff Current (VEB = 5.0 V, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO — — IEBO — — — — 10 1.0 10 20 25 5.0 — — — — — — Vdc Vdc Vdc
µAdc mAdc µAdc
ON CHARACTERISTICS
DC Current Gain (VCE = 10 V, IC = 5.0 mA) (VCE = 1.0 V, IC = 0.5 A) (VCE = 1.0 V, IC = 1.0 A) Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 20 MHz) Collector–Emitter Saturation Voltage (IC = 1.0 A, IB = 100 mA) Base–Emitter On Voltage (IC = 1.0 A, VCE = 1.0 V) REV 1 fT VCE(sat) VBE(on) hFE BC368, 369 BC368–25 50 85 170 60 65 — — — — — — — — — — 375 375 — — 0.5 1.0 MHz V V —
Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1999
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NPN BC368, -25 PNP BC369
200 VCE , COLLECTOR VOLTAGE (VOLTS)
1.0 TJ = 25°C 0.8
hFE, CURRENT GAIN
100 70 50 VCE = 1.0 V TJ = 25°C
0.6 50 mA 0.4 100 mA 1000 mA 0.2 500 mA 250 mA 20 50 100
20 10 20 200 50 100 IC, COLLECTOR CURRENT (mA) 500 1000
IC = 10 mA 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IB, BASE CURRENT (mA)
Figure 1. DC Current Gain
Figure 2. Collector Saturation Region
1.0 TJ = 25°C 0.8 V, VOLTAGE (VOLTS) VBE(on) @ VCE = 1.0 V 0.6 VBE(sat) @ IC/IB = 10 θ VB , TEMPERATURE COEFFICIENT (mV/ °C)
–0.8
–1.2
–1.6 θVB for VBE
0.4
–2.0
0.2 VCE(sat) @ IC/IB = 10 0 1.0 2.0 5.0 10 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA)
–2.4
–2.8 1.0 2.0
5.0 10 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
Figure 4. Temperature Coefficient
300 200 C, CAPACITANCE (pF)
160
TJ = 25°C
120
100 70 50 VCE = 10 V TJ = 25°C f = 20 MHz 10 20 50 100 200 500 1000
80 Cibo 40 Cobo 0 Cobo Cibo 5.0 1.0 10 2.0 15 3.0 20 4.0 25 5.0
30
IC, COLLECTOR CURRENT (mA)
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Current–Gain — Bandwidth Product
Figure 6. Capacitance
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN BC368, -25 PNP BC369
PACKAGE DIMENSIONS
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 –––
A R P
SEATING PLANE
B
F
L K D
X X G H V
1
J
C N N
SECTION X–X
DIM A B C D F G H J K L N P R V
CASE 029–04 (TO–226AA) ISSUE AD
STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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NPN BC368, -25 PNP BC369
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