BC351

BC 337 / BC 338 NPN Si-Epitaxial PlanarTransistors General Purpose Transistors NPN 625 mW TO-92 (10D3) 0.18 g Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard Pinning 1=C 2=B 3=E Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation – Verlustleistung Collector current – Kollektorstrom (DC) Junction temp. – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open VCE0 VCB0 VEB0 Ptot IC Tj TS Grenzwerte (TA = 25/C) BC 337 45 V 50 V 5V 625 mW 1) 800 mA 150/C - 55…+ 150/C Kennwerte (Tj = 25/C) Min. Typ. 160 250 400 – – – – Max. 250 400 630 200 nA 200 nA 10 :A 10 :A BC 338 25 V 30 V Characteristics (Tj = 25/C) DC current gain – Kollektor-Basis-Stromverhältnis Group -16 VCE = 1 V, IC = 100 mA Group -25 Group -40 VCE = 40 V VCE = 20 V VCE = 40 V, Tj = 125/C VCE = 20 V, Tj = 125/C BC 337 BC 338 BC 337 BC 338 hFE hFE hFE ICES ICES ICES ICES 100 160 250 – – – – Collector-Emitter cutoff current – Kollektorreststrom 1 ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden 4 01.11.2003 General Purpose Transistors Characteristics (Tj = 25/C) Min. Coll...