PNP Silicon AF Transistors
BC 327 BC 328
High current gain q High collector current q Low collector-emitter saturation...
PNP Silicon AF
Transistors
BC 327 BC 328
High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 337, BC 338 (
NPN)
q 2 3 1
Type BC 327 BC 327-16 BC 327-25 BC 327-40 BC 328 BC 328-16 BC 328-25 BC 328-40
Marking –
Ordering Code Q62702-C311 Q62702-C311-V3 Q62702-C311-V4 Q62702-C311-V2 Q62702-C312 Q62702-C312-V3 Q62702-C312-V4 Q62702-C312-V2
Pin Configuration 1 2 3 C B E
Package1) TO-92
1)
For detailed information see chapter Package Outlines.
Semiconductor Group
1
5.91
BC 327 BC 328
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TC = 66 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case1) Rth JA Rth JC
≤ ≤
Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg
Values BC 327 45 50 5
BC 328 25 30 800 1 100 200 625 150
Unit V
mA A mA mW ˚C
– 65 … + 150
200 135
K/W
1)
Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Semiconductor Group
2
BC 327 BC 328
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 327 BC 328 Collector-base breakdown voltage IC = 100 µA BC 327 BC 328 Emitter-base breakdown voltage IE = 10 µA Collector cutoff current VCB = 25 V VCB = 45 V VCB = 25 V, TA = 150 ˚C VCB = 45 V, TA = 150 ˚C...