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BC328 Dataheets PDF



Part Number BC328
Manufacturers General Semiconductor
Logo General Semiconductor
Description Small Signal Transistors
Datasheet BC328 DatasheetBC328 Datasheet (PDF)

BC327, BC328 Small Signal Transistors (PNP) TO-92 .181 (4.6) .142 (3.6) min..492 (12.5) .181 (4.6) max.∅ .022 (0.55) .098 (2.5) CE B Dimensions in inches and (millimeters) FEATURES ♦ PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suit-able for AF-driver stages and low-power output stages. ♦ These types are also available subdivided into three groups -16, -25, and -40, according to their DC current gain. As complementary types, the NPN transisto.

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BC327, BC328 Small Signal Transistors (PNP) TO-92 .181 (4.6) .142 (3.6) min..492 (12.5) .181 (4.6) max.∅ .022 (0.55) .098 (2.5) CE B Dimensions in inches and (millimeters) FEATURES ♦ PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suit-able for AF-driver stages and low-power output stages. ♦ These types are also available subdivided into three groups -16, -25, and -40, according to their DC current gain. As complementary types, the NPN transistors BC337 and BC338 are recommended. ♦ On special request, these transistors are also manufactured in the pin configuration TO-18. MECHANICAL DATA Case: TO-92 Plastic Package Weight: approx. 0.18 g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Value Collector-Emitter Voltage Collector-Emitter Voltage BC327 BC328 BC327 BC328 –VCES –VCES –VCEO –VCEO 50 30 45 25 Emitter-Base Voltage –VEBO 5 Collector Current –IC 800 Peak Collector Current –ICM 1 Base Current –IB 100 Power Dissipation at Tamb = 25 °C Ptot 6251) Junction Temperature Tj 150 Storage Temperature Range TS –65 to +150 1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. Unit V V V V V mA A mA mW °C °C 4/98 BC327, BC328 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Min. Typ. Max. DC Current Gain at –VCE = 1 V, –IC = 100 mA Current Gain Group-16 -25 -40 at –VCE = 1 V, –IC = 300 mA Current Gain Group-16 -25 -40 hFE hFE hFE hFE hFE hFE 100 160 250 160 250 400 250 400 630 60 130 – 100 200 – 170 320 – Thermal Resistance Junction to Ambient Air RthJA – – 2001) Collector-Emitter Cutoff Current at –VCE = 45 V at –VCE = 25 V BC327 –ICES – 2 100 BC328 –ICES – 2 100 at –VCE = 45 V, Tamb = 125 °C BC327 –ICES – – 10 at –VCE = 25 V, Tamb = 125 °C BC328 –ICES – – 10 Collector-Emitter Breakdown Voltage at –IC = 10 mA BC327 BC328 – V(BR)CEO – V(BR)CEO 45 25 – – – – Collector-Emitter Breakdown Voltage at –IC = 0.1 mA BC327 BC328 – V(BR)CES – V(BR)CES 50 30 – – – – Emitter-Base Breakdown Voltage at –IE = 0.1 mA – 5–– V(BR)EBO Collector Saturation Voltage at –IC = 500 mA, –IB = 50 mA –VCEsat – – 0.7 Base-Emitter Voltage at –VCE = 1 V, –IC = 300 mA –VBE – – 1.2 Gain-Bandwidth Product fT – 100 – at –VCE = 5 V, –IC = 10 mA, f = 50 MHz Collector-Base Capacitance at –VCB = 10 V, f = 1 MHz CCBO – 12 – 1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. Unit – – – – – – K/W nA nA µA µA V V V V V V V MHz pF RATINGS AND CHARACTERISTIC CURVES BC327, BC328 RATINGS AND CHARACTERISTIC CURVES BC327, BC328 RATINGS AND CHARACTERISTIC CURVES BC327, BC328 .


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