Document
BC327, BC328
Small Signal Transistors (PNP)
TO-92
.181 (4.6)
.142 (3.6)
min..492 (12.5) .181 (4.6)
max.∅ .022 (0.55) .098 (2.5)
CE B
Dimensions in inches and (millimeters)
FEATURES
♦ PNP Silicon Epitaxial Planar Transistors for
switching and amplifier applications. Especially suit-able for AF-driver stages and low-power output stages.
♦ These types are also available subdivided
into three groups -16, -25, and -40, according to their DC current gain. As complementary types, the NPN transistors BC337 and BC338 are recommended.
♦ On special request, these transistors are also
manufactured in the pin configuration TO-18.
MECHANICAL DATA
Case: TO-92 Plastic Package Weight: approx. 0.18 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Value
Collector-Emitter Voltage Collector-Emitter Voltage
BC327 BC328
BC327 BC328
–VCES –VCES
–VCEO –VCEO
50 30
45 25
Emitter-Base Voltage
–VEBO
5
Collector Current
–IC 800
Peak Collector Current
–ICM
1
Base Current
–IB 100
Power Dissipation at Tamb = 25 °C
Ptot 6251)
Junction Temperature
Tj 150
Storage Temperature Range
TS –65 to +150
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
Unit V V V V V mA A mA mW °C °C
4/98
BC327, BC328
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
DC Current Gain at –VCE = 1 V, –IC = 100 mA
Current Gain Group-16
-25 -40 at –VCE = 1 V, –IC = 300 mA
Current Gain Group-16 -25 -40
hFE hFE hFE
hFE hFE hFE
100 160 250 160 250 400 250 400 630
60 130 – 100 200 – 170 320 –
Thermal Resistance Junction to Ambient Air
RthJA
–
–
2001)
Collector-Emitter Cutoff Current
at –VCE = 45 V at –VCE = 25 V
BC327 –ICES
–
2
100
BC328 –ICES
–
2
100
at –VCE = 45 V, Tamb = 125 °C
BC327 –ICES
–
–
10
at –VCE = 25 V, Tamb = 125 °C
BC328 –ICES
–
–
10
Collector-Emitter Breakdown Voltage
at –IC = 10 mA
BC327 BC328
–
V(BR)CEO –
V(BR)CEO
45 25
– –
– –
Collector-Emitter Breakdown Voltage
at –IC = 0.1 mA
BC327 BC328
–
V(BR)CES –
V(BR)CES
50 30
– –
– –
Emitter-Base Breakdown Voltage at –IE = 0.1 mA
– 5–– V(BR)EBO
Collector Saturation Voltage at –IC = 500 mA, –IB = 50 mA
–VCEsat
–
–
0.7
Base-Emitter Voltage at –VCE = 1 V, –IC = 300 mA
–VBE
–
–
1.2
Gain-Bandwidth Product
fT – 100 –
at –VCE = 5 V, –IC = 10 mA, f = 50 MHz
Collector-Base Capacitance at –VCB = 10 V, f = 1 MHz
CCBO
–
12 –
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
Unit
– – – – – – K/W
nA nA µA µA
V V
V V
V
V
V
MHz
pF
RATINGS AND CHARACTERISTIC CURVES BC327, BC328
RATINGS AND CHARACTERISTIC CURVES BC327, BC328
RATINGS AND CHARACTERISTIC CURVES BC327, BC328
.