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BC328 Dataheets PDF



Part Number BC328
Manufacturers Motorola Inc
Logo Motorola  Inc
Description Amplifier Transistors
Datasheet BC328 DatasheetBC328 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC327/D Amplifier Transistors PNP Silicon COLLECTOR 1 BC327,-16,-25 BC328,-16,-25 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC327 BC328 Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD –45 –25 –50 –30 –5.0 –800 625 5.0 Vdc Vdc Vdc mAdc mW mW/°C Total Device Dissipation @ TC = 25°C.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC327/D Amplifier Transistors PNP Silicon COLLECTOR 1 BC327,-16,-25 BC328,-16,-25 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC327 BC328 Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD –45 –25 –50 –30 –5.0 –800 625 5.0 Vdc Vdc Vdc mAdc mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 Watt 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –10 mA, IB = 0) BC327 BC328 V(BR)CEO Collector – Emitter Breakdown Voltage (IC = –100 µA, IE = 0) BC327 BC328 V(BR)CES Emitter – Base Breakdown Voltage (IE = –10 mA, IC = 0) Collector Cutoff Current (VCB = –30 V, IE = 0) (VCB = –20 V, IE = 0) Collector Cutoff Current (VCE = –45 V, VBE = 0) (VCE = –25 V, VBE = 0) Emitter Cutoff Current (VEB = –4.0 V, IC = 0) BC327 BC328 BC327 BC328 V(BR)EBO ICBO ICES IEBO Min –45 –25 –50 –30 –5.0 — — — — — 1 2 3 CASE 29–04, STYLE 17 TO–92 (TO–226AA) Typ Max Unit Vdc —— —— Vdc —— —— — — Vdc nAdc — –100 — –100 nAdc — –100 — –100 — –100 nAdc ©MMotootorroollaa, Small–Signal Inc. 1996 Transistors, FETs and Diodes Device Data 1 BC327,-16,-25 BC328,-16,-25 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC = –100 mA, VCE = –1.0 V) (IC = –300 mA, VCE = –1.0 V) BC327/BC328 hFE — 100 — 630 BC327–16/BC328–16 100 — 250 BC327–25/BC328–25 160 — 400 40 — — Base–Emitter On Voltage (IC = –300 mA, VCE = –1.0 V) VBE(on) — — –1.2 Vdc Collector – Emitter Saturation Voltage (IC = –500 mA, IB = –50 mA) VCE(sat) — — –0.7 Vdc SMALL–SIGNAL CHARACTERISTICS Output Capacitance (VCB = –10 V, IE = 0, f = 1.0 MHz) Cob — 11 — pF Current – Gain — Bandwidth Product (IC = –10 mA, VCE = –5.0 V, f = 100 MHz) fT — 260 — MHz r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1.0 0.7 D = 0.5 0.5 0.3 0.2 0.2 0.1 0.1 0.05 0.07 0.02 0.05 0.03 0.01 0.02 SINGLE PULSE SINGLE PULSE 0.01 0.001 0.002 0.005 0.01 0.02 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.05 0.1 0.2 0.5 1.0 2.0 t, TIME (SECONDS) Figure 1. Thermal Response θJC(t) = (t) θJC θJC = 100°C/W MAX θJA(t) = r(t) θJA θJA = 375°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) θJC(t) 5.0 10 20 50 100 –1000 –100 1.0 s 1.0 ms dc TA = 25°C dc TC = 25°C TJ = 135°C 100 µs –10 –1.0 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT (APPLIES BELOW RATED VCEO) –3.0 –10 –30 VCE, COLLECTOR–EMITTER VOLTAGE –100 Figure 2. Active Region — Safe Operating Area hFE, DC CURRENT GAIN 1000 100 10 –0.1 VCE = –1.0 V TA = 25°C –1.0 –10 –100 IC, COLLECTOR CURRENT (mA) Figure 3. DC Current Gain –1000 IC, COLLECTOR CURRENT (mA) 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) –1.0 TJ = 25°C –0.8 –0.6 IC = –500 mA –0.4 IC = –300 mA –0.2 IC = –100 mA IC = –10 mA 0 –0.01 –0.1 –1.0 –10 IB, BASE CURRENT (mA) Figure 4. Saturation Region –100 +1.0 θVC for VCE(sat) 0 –1.0 –2.0 θVB for VBE –1.0 –10 –100 –1000 IC, COLLECTOR CURRENT Figure 6. Temperature Coefficients C, CAPACITANCE (pF) V, VOLTAGE (VOLTS) BC327,-16,-25 BC328,-16,-25 –1.0 TA = 25°C –0.8 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = –1.0 V –0.6 –0.4 –0.2 0 –1.0 VCE(sat) @ IC/IB = 10 –10 –100 IC, COLLECTOR CURRENT (mA) Figure 5. “On” Voltages –1000 100 10 1.0 –0.1 Cib Cob –1.0 –10 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitances –100 θV, TEMPERATURE COEFFICIENTS (mV/°C) Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 BC327,-16,-25 BC328,-16,-25 PACKAGE DIMENSIONS R SEATING PLANE AB P L F K XX H V G C 1 N N D J SECTION X–X CASE 029–04 (TO–226AA) ISSUE AD NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES DIM MIN MAX A 0.175 0.205 B 0.170 0.210 C 0.125 0.165 D 0.016 0.022 F 0.016 0.019 G 0.045 0.055 H 0.095 0.105 J 0.015 0.020 K 0.500 ––– L 0.250 ––– N 0.080 0.105 P ––– 0.100 R 0.115 ––– V 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER Motorola reserves the right t.


BC327-40 BC328 BC328


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