Document
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC327/D
Amplifier Transistors
PNP Silicon
COLLECTOR 1
BC327,-16,-25 BC328,-16,-25
2 BASE
3 EMITTER
MAXIMUM RATINGS
Rating
Symbol BC327 BC328 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C Derate above 25°C
VCEO VCBO VEBO
IC PD
–45 –25 –50 –30
–5.0 –800 625 5.0
Vdc Vdc Vdc mAdc mW mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD
1.5 Watt 12 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient RqJA
200 °C/W
Thermal Resistance, Junction to Case
RqJC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = –10 mA, IB = 0)
BC327 BC328
V(BR)CEO
Collector – Emitter Breakdown Voltage (IC = –100 µA, IE = 0)
BC327 BC328
V(BR)CES
Emitter – Base Breakdown Voltage (IE = –10 mA, IC = 0)
Collector Cutoff Current (VCB = –30 V, IE = 0) (VCB = –20 V, IE = 0)
Collector Cutoff Current (VCE = –45 V, VBE = 0) (VCE = –25 V, VBE = 0)
Emitter Cutoff Current (VEB = –4.0 V, IC = 0)
BC327 BC328
BC327 BC328
V(BR)EBO ICBO ICES IEBO
Min
–45 –25
–50 –30 –5.0
— —
— — —
1 2 3
CASE 29–04, STYLE 17 TO–92 (TO–226AA)
Typ Max Unit
Vdc —— ——
Vdc —— ——
— — Vdc
nAdc — –100 — –100
nAdc — –100 — –100
—
–100
nAdc
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1
BC327,-16,-25 BC328,-16,-25
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = –100 mA, VCE = –1.0 V)
(IC = –300 mA, VCE = –1.0 V)
BC327/BC328
hFE — 100 — 630
BC327–16/BC328–16
100 — 250
BC327–25/BC328–25
160 — 400
40 — —
Base–Emitter On Voltage (IC = –300 mA, VCE = –1.0 V)
VBE(on)
—
— –1.2 Vdc
Collector – Emitter Saturation Voltage (IC = –500 mA, IB = –50 mA)
VCE(sat)
—
— –0.7 Vdc
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance (VCB = –10 V, IE = 0, f = 1.0 MHz)
Cob — 11 — pF
Current – Gain — Bandwidth Product (IC = –10 mA, VCE = –5.0 V, f = 100 MHz)
fT — 260 — MHz
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1.0
0.7 D = 0.5 0.5
0.3 0.2 0.2 0.1
0.1 0.05 0.07 0.02 0.05
0.03 0.01
0.02
SINGLE PULSE SINGLE PULSE
0.01 0.001 0.002
0.005 0.01 0.02
P(pk)
t1 t2
DUTY CYCLE, D = t1/t2
0.05 0.1 0.2
0.5 1.0 2.0
t, TIME (SECONDS)
Figure 1. Thermal Response
θJC(t) = (t) θJC θJC = 100°C/W MAX θJA(t) = r(t) θJA θJA = 375°C/W MAX D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 TJ(pk) – TC = P(pk) θJC(t)
5.0 10 20
50 100
–1000 –100
1.0 s 1.0 ms
dc TA = 25°C
dc TC = 25°C
TJ = 135°C 100 µs
–10 –1.0
CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT (APPLIES BELOW RATED VCEO)
–3.0 –10 –30
VCE, COLLECTOR–EMITTER VOLTAGE
–100
Figure 2. Active Region — Safe Operating Area
hFE, DC CURRENT GAIN
1000
100
10 –0.1
VCE = –1.0 V TA = 25°C
–1.0 –10 –100 IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
–1000
IC, COLLECTOR CURRENT (mA)
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
–1.0 TJ = 25°C
–0.8
–0.6 IC = –500 mA
–0.4
IC = –300 mA –0.2 IC = –100 mA
IC = –10 mA 0
–0.01
–0.1
–1.0
–10
IB, BASE CURRENT (mA)
Figure 4. Saturation Region
–100
+1.0 θVC for VCE(sat)
0
–1.0
–2.0 θVB for VBE
–1.0 –10 –100 –1000 IC, COLLECTOR CURRENT
Figure 6. Temperature Coefficients
C, CAPACITANCE (pF)
V, VOLTAGE (VOLTS)
BC327,-16,-25 BC328,-16,-25
–1.0 TA = 25°C
–0.8 VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = –1.0 V –0.6
–0.4
–0.2
0 –1.0
VCE(sat) @ IC/IB = 10
–10 –100 IC, COLLECTOR CURRENT (mA) Figure 5. “On” Voltages
–1000
100
10 1.0
–0.1
Cib
Cob
–1.0 –10 VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitances
–100
θV, TEMPERATURE COEFFICIENTS (mV/°C)
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
BC327,-16,-25 BC328,-16,-25
PACKAGE DIMENSIONS
R
SEATING PLANE
AB
P L
F K
XX
H V
G
C
1
N
N
D J
SECTION X–X
CASE 029–04 (TO–226AA)
ISSUE AD
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.
INCHES
DIM MIN MAX A 0.175 0.205 B 0.170 0.210 C 0.125 0.165 D 0.016 0.022 F 0.016 0.019 G 0.045 0.055 H 0.095 0.105 J 0.015 0.020 K 0.500 ––– L 0.250 ––– N 0.080 0.105 P ––– 0.100 R 0.115 ––– V 0.135 –––
MILLIMETERS
MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 –––
STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER
Motorola reserves the right t.